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Resonator

A resonator, cross-sectional area technology, applied in the field of MEMS resonators, manufacturing such resonators

Active Publication Date: 2011-04-20
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, for an oxide layer with a predetermined thickness of 300nm, the actual thickness of the layer is between 293nm and 308nm, which means that there is a relative error of 5%.

Method used

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Experimental program
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Embodiment Construction

[0127] refer to figure 2 with Figures 3a to 3c , a first embodiment of the invention is schematically illustrated and generally indicated by the reference numeral 10 . The resonator 10 includes three beams (or springs) 12 and a mass 14 . Each beam 12 includes a free end or tip 16 , side walls 18 , top 20 and bottom wall 22 . The beam is anchored at the anchor 17 by effective mass. Mass 14 acts as an anchor for each beam 12 . The free end 16 of each beam can be considered as the tip of the respective beam 12 . Each beam 12 is formed from a first material comprising silicon. as in figure 2 As explained in , the silicon is locally highly doped at the sidewalls 18 so that the thickness of the second material (silicon dioxide in this case) increases. In this embodiment, the thickness of the second material at the side walls is increased and is therefore thicker than the material on the top and bottom walls 20, 22, respectively. This technique is called enhanced side wall o...

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PUM

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Abstract

A resonator comprising a beam formed from a first material having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and a second material having a second Young's modulus and a second temperature coefficient of the second Young's modules, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient at least within operating conditions of the resonator, wherein the ratio of the cross sectional area of the first material to the cross sectional area of the second material varies along the length of the beam, the cross sectional areas being measured substantially perpendicularly to the beam.

Description

technical field [0001] The present invention relates to a resonator structure, in particular a MEMS (Micro Electro Mechanical System) resonator, and a method of manufacturing such a resonator. Background technique [0002] Timing references in electronic devices have been implemented mechanically for a long time. Oscillator packaged quartz crystal resonators exist in many applications. The high quality factor and low temperature drift of a quartz crystal resonator means it has high stability and is therefore chosen as a timing reference in electronic devices. [0003] On the other hand, the MEMS resonator is also a device formed by micro-components operatively arranged on the substrate. MEMS resonators are typically constructed by utilizing photolithography and other microfabrication techniques to fabricate, for example, sensors and actuators. Micromechanical resonators are typically formed on silicon substrates of the type used for integrated circuits and can be fabricat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/00H03H3/00B81B3/00B81C1/00
CPCH03H9/2473H03H3/0076H03H9/2489H03H9/2447H03H9/02448
Inventor 卡斯·范·德·阿沃尔特约瑟夫·托马斯·马丁内斯·范贝克约翰内斯·范·温格登约卜·邦当罗伯特·詹姆斯·帕斯克·兰德
Owner NXP BV