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Multilayer mirror and lithographic apparatus

A mirror and equipment technology, applied in microlithography exposure equipment, optomechanical equipment, optics, etc., can solve problems such as inappropriate

Active Publication Date: 2013-12-18
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these mirrors do not appear to be suitable for reflecting radiation with even shorter wavelengths

Method used

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  • Multilayer mirror and lithographic apparatus
  • Multilayer mirror and lithographic apparatus
  • Multilayer mirror and lithographic apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The apparatus includes: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., extreme ultraviolet (EUV) radiation); a support structure (e.g., a mask table) MT configured to support a patterning device (e.g., A mask or reticle) MA and is connected to a first positioning device PM configured to precisely position the patterning device; a substrate table (such as a wafer stage) WT configured to hold a substrate (such as coated with a resist Wafer) W, and is connected with the second positioning device PW that is configured to accurately position the substrate; and projection system (such as refractive projection lens system) PS, the projection system PS is configured for A pattern of radiation beam B is projected onto a target portion C of substrate W (eg, comprising one or more dies).

[0039] The illumination system may incl...

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Abstract

A multilayer mirror is constructed and arranged to reflect radiation haying a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B4C layers, U and B4C layers, Th and B4C layers, C and B9C layers, La and B9C layers, U and B9C layers, Th and B9C layers, La and B layers, C and B layers. U and B layers, and Th and B layers.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 61 / 129,087, filed June 4, 2008, which is hereby incorporated by reference in its entirety. technical field [0003] The invention relates to a multilayer mirror and a lithographic apparatus comprising such a multilayer mirror. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In such cases, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred by imaging the pattern onto a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F1/24G21K1/06
CPCG21K1/062B82Y10/00G03F7/70958G03F1/24G21K2201/067
Inventor D·格卢什科夫V·巴内尼J·H·J·莫尔斯L·A·斯基梅诺克N·N·塞拉斯申科
Owner ASML NETHERLANDS BV