Metal gate electrode and method for manufacturing metal gate electrode

Abstract

The invention discloses a method for manufacturing a metal gate electrode, which comprises the following steps of: sequentially forming a gate oxide and a T-shaped structural substance on an active area of a semiconductor substrate; depositing an interlayer medium layer at positions without the gate oxide and the T-shaped structural substance on the active area of the semiconductor substrate, wherein the height of the interlayer medium layer is the same as that of the T-shaped structural substance; removing the T-shaped structural substance; and depositing and forming the T-shaped metal gate electrode at the positions from which the T-shaped structural substance is removed. The invention also discloses the metal gate electrode with a T-shaped structure. In the method for manufacturing the metal gate electrode, the formed metal gate electrode increases a window for aligning the metal gate electrode and a contact hole, is easier to fill into the interlayer medium layer, and endows a circuit appliance with relatively higher electrical properties.

Description

technical field [0001] The invention relates to the field of semiconductor logic circuit manufacturing, in particular to a metal gate electrode and a method for manufacturing the metal gate electrode. Background technique [0002] Currently, high dielectric constant insulating materials and metal gate electrodes will be used to fabricate logic circuit devices. [0003] In order to control the short channel effect, smaller device size requires a further increase in the gate electrode capacitance. This can be achieved by continuously reducing the thickness of the gate oxide layer, but this is accompanied by an increase in gate electrode leakage current. When silicon dioxide is used as the gate oxide layer and the thickness is below 5.0nm, the leakage current becomes unbearable. The way to solve the above problems is to use high dielectric constant insulating materials to replace silicon dioxide. High dielectric constant insulating materials can be hafnium silicate, hafnium s...

AI Technical Summary

Problems solved by technology

Moreover, in the gate last manufacturing process, the metal gate electrode is filled in the interlayer dielectric layer, such as Figure 2d As shown, the opening of the metal gate electrode of the shape is small, so it is difficult to fill in the interlayer dielectric layer

[0012] Although the top CD of the inverted trapezoidal gate electrode is relatively large, it is easy to align with the CT, but it is difficult to precisely control the trapezoidal angle, and the uniformity is poor, which will affect the uniformity and continuity of the turn-on voltage of the gate electrode, making the formed circuit device have relatively high poor electrical

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