Insulated gate bipolar transistor (IGBT)
A technology of bipolar transistors and insulated gates, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of large on-state loss and achieve the effects of small conduction loss, reduced on-state resistance, and reduced on-state loss
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Embodiment 1
[0012] Such as figure 1 As shown, the bottom of the insulated gate bipolar transistor of the present invention is the collector 1 , and upwards are the collector region 2 , the buffer layer 3 , the drift region 4 , the P well region 6 and the emitter region 7 . SiO 2 The insulating layer 5 penetrates laterally into the P well region 6 and the drift region 4, the top of the emitter region 7 is covered with an emitter 8, and the gate 9 straddles the emitter region 7, the P well region 6 and the drift region 4, and the gate 9 is Among the polysilicon 10.
[0013] When the insulated gate bipolar transistor is working, the collector region 2 injects holes into the drift region 4 to form conductance modulation, and the holes drift toward the emitter 8 under the positive pressure of the collector 1, and are absorbed by the insulating layer when entering the P well region 6 5 barriers, a large number of holes along the SiO 2 As the insulating layer 5 moves laterally, the holes accu...
Embodiment 2
[0015] Such as figure 2 As shown, the bottom of the insulated gate bipolar transistor of the present invention is the collector 1 , and upwards are the collector region 2 , the buffer layer 3 , the drift region 4 , the P well region 6 and the emitter region 7 . SiO 2 The insulating layer 5 penetrates the drift region 4 laterally near the P well region 6, the top of the emitter region 7 is covered with an emitter 8, the gate 9 spans the emitter region 7, the P well region 6 and the drift region 4, and the gate 9 is in the polysilicon 10 .
[0016] When the insulated gate bipolar transistor is working, the collector region 2 injects holes into the drift region 4 to form conductance modulation, and the holes drift toward the emitter 8 under the positive pressure of the collector 1, and are trapped under the P well region 6 by the insulating layer 5 barriers, a large number of holes along the SiO 2 As the insulating layer 5 moves laterally, the holes accumulate accordingly, th...
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