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All-perovskite multiferroic magnetoelectric compound film and preparation method thereof

A magnetoelectric composite and ferromagnetic thin film technology, applied in the direction of magnetic layer, ion implantation plating, coating, etc., can solve problems such as difficult to obtain contact interface, poor compatibility, and affecting device performance

Inactive Publication Date: 2013-06-12
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the mismatch between the lattice structure of the ferromagnetic material with the spinel structure and the ferroelectric material with the perovskite structure, the compatibility between the above two materials is poor, and it is difficult to obtain a good contact interface with the existing technology, which in turn affects the device performance. ; and the spinel structure material is poorly compatible with the modern information industry, which also makes it difficult for the existing 2-2 structure magnetoelectric composite film to be widely used in the semiconductor industry

Method used

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  • All-perovskite multiferroic magnetoelectric compound film and preparation method thereof
  • All-perovskite multiferroic magnetoelectric compound film and preparation method thereof
  • All-perovskite multiferroic magnetoelectric compound film and preparation method thereof

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Embodiment 1

[0023] In this example, using the pulsed laser deposition method, the LaAlO 3 (001) substrate, the substrate temperature is 600-750°C, the working pressure is 10Pa, the laser energy is 300mJ / pulse, the pulse frequency is 10Hz, the working gas is high-purity (5N) oxygen, and the target-base distance is 50mm. La 2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 Thin film, used to deposit La 2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 The target material of the thin film is La 2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 Ceramic target; in the above La2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 After the thin film is deposited, it is annealed at a substrate temperature of 850° C. for 1 hour under the protection of an oxygen atmosphere. BaTiO 3 Film thickness is 400nm, La 2 / 3 Sr 1 / 3 MnO 3 The film thickness is 400-800nm.

[0024] The XRD of the resulting composite film is as follows figure 1 As shown, due to the use of the La 2 / 3 Sr 1 / 3 MnO 3 Lattice-matched LaAlO 3 (001) substrate, and the introduction of oxygen annealing ...

Embodiment 2

[0027] This embodiment is the implementation of the best preparation process, and the specific preparation conditions are: substrate LaAlO 3 (001) The temperature is 700°C, the working pressure is 10Pa, the laser energy is 300mJ / pulse, the pulse frequency is 10Hz, the working gas is 10Pa high-purity oxygen, the distance between the target and the base is 50mm, and La 2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 Thin film, used to deposit La 2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 The target material of the thin film is La 2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 Ceramic target, BaTiO 3 Film thickness is 400nm, La 2 / 3 Sr 1 / 3 MnO 3 The film thickness is 600 nm. In the above La 2 / 3 Sr 1 / 3 MnO 3 and BaTiO 3 After the thin film is deposited, it is annealed at a substrate temperature of 850° C. for 1 hour under the protection of an oxygen atmosphere.

[0028] The magnitude of the magnetoelectric effect of the composite film is related to the thickness ratio of the ferroelectric and ferromagnetic layers...

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Abstract

The invention discloses an all-perovskite multiferroic magnetoelectric compound film and a preparation method thereof, belonging to the technical field of films. The La2 / 3Sr1 / 3MnO3 / BaTiO3 multiferroic magnetoelectric compound film with an all-perovskite structure is deposited on the surface of a LaAlO3 (001) single crystal substrate, and successively comprises a La2 / 3 Sr1 / 3MnO3 film and a BaTiO3 ferroelectric film from bottom to top; and the thickness of the La2 / 3Sr1 / 3MnO3 ferromagnetic film is 400-800nm, and the thickness of the BaTiO3 ferroelectric film is 400nm. The preparation method is as follows: deposing a La2 / 3Sr1 / 3MnO3 film and a BaTiO3 film on the LaAlO3 single crystal substrate by using pulse laser; and then annealing at the temperature of 850 DGE C. By using the preparation method, the ferromagnetic and ferroelectric properties of the La2 / 3Sr1 / 3MnO3 and BaTiO3 can be effectively improved, and the magnetoelectric effect of the compound film can also be improved.

Description

technical field [0001] The invention belongs to the field of thin film technology, and relates to a thin film material and a preparation method thereof, more specifically, to an all-perovskite multiferroic magnetoelectric composite thin film and a preparation method thereof. Background technique [0002] The magnetoelectric effect has a huge potential in the information industry because it closely links the polarization vectors that can represent information such as magnetization and electric polarization, and provides a way to read or write information on storage media by different means. Value. [0003] In recent years, the preparation of ferro-magnetoelectric nano-magnetoelectric composite films has become an important development direction to realize the application of magnetoelectric effect in information functional devices. Its advantages are that it can control and adjust the piezoelectric phase and magnetostrictive phase at the nanoscale; it can study the magnetoele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/06H01F10/12
Inventor 张铭李廷先王光明严辉宋雪梅王如志侯育冬朱满康汪浩王波李扩社
Owner BEIJING UNIV OF TECH
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