Process for integrating Schottky diode in power MOS transistor
A technology of MOS transistors and Schottky diodes is applied in the field of semiconductor integrated circuit device manufacturing, which can solve the problems of insufficiently optimized process flow, high cost, limited market prospects, etc., so as to reduce contact hole trench etching and reduce product cost. Effect
Inactive Publication Date: 2011-05-25
SHANGHAI HUA HONG NEC ELECTRONICS
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[0006] It can be seen that although the existing more advanced process method can form the Schottky region at the bottom of the contact hole of the power MOS transistor, there are still shortcomings such as insufficient process flow and high cost, which limit its market prospect.
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[0027] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0028] The power MOS transistor device mentioned in the present invention, on the basis of the original structure, reduces the Body photolithographic layer and a contact hole trench etching through the new Body implantation and contact hole implantation process, and also reduces the contact of the MOS transistor. A Schottky diode is formed at the bottom of the hole. Such as Figure 3-Figure 7 Shown, the concrete technological realization flow process of the present invention is as follows:
[0029] (1) Body implantation is performed on the substrate (silicon substrate 1) that has been etched on the gate silicon dioxide barrier layer 2, the photoresist is removed, the thermal diffusion Body is advanced, and the Body region 3 is formed, see image 3 ;In this step, according to different threshold voltage requirements, the energy injected into ...
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The present invention discloses a process for integrating a Schottky diode in a power MOS transistor, comprising the steps of: (1) performing Body injection, photo-resister stripping and Body propelling on a substrate sheet in order, wherein the substrate sheet has already undergone grid silica barrier layer etching; (2) performing grid channel etching to form a grid; (3) performing source injection and source region propelling; (4) performing contact aperture etching; (5) performing contact aperture injection for the first time; (6) performing contact aperture groove etching; (7) performing contact aperture injection for the second time; and (8) performing the follow-up process steps, i.e., performing metal deposition, exposure and etching in order. The process for integrating the Schottky diode in the power MOS transistor of the invention, which makes improvements on the basis of the existing process for integrating a Schottky diode in a power MOS transistor, has the advantages of eliminating photoetching layers, simplifying the process flow and reducing the product cost.
Description
technical field [0001] The invention relates to a manufacturing method of a semiconductor integrated circuit device, in particular to a process method for integrating a Schottky diode in a power MOS transistor. Background technique [0002] In semiconductor integrated circuits, the structure of the existing relatively advanced power MOS transistor integrated Schottky diode is as follows: figure 1 shown. [0003] The power MOS transistor is integrated with a Schottky diode, which can significantly improve the cross-frequency characteristics of the device. figure 1 The existing more advanced power MOS transistor integrated Schottky diode structure is shown, and the Schottky diode is formed at the bottom of the contact hole trench through contact hole implantation. The process requires a photolithography layer to block the contact during Body implantation. In the hole area, two etchings are required in the contact hole trench formation process. This process obviously has the ...
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Login to View More IPC IPC(8): H01L21/8234H01L21/265
Inventor 邵向荣魏炜
Owner SHANGHAI HUA HONG NEC ELECTRONICS