Semiconductor device and lead frame thereof

A semiconductor and lead frame technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as difficult to improve withstand voltage, and achieve high withstand voltage

Inactive Publication Date: 2011-05-25
PANASONIC CORP
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In conventional semiconductor devices, the distance between lead terminals is limited, so it is difficult to increase the withstand voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and lead frame thereof
  • Semiconductor device and lead frame thereof
  • Semiconductor device and lead frame thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0086] figure 1 A plan view structure of a semiconductor device according to an embodiment is shown. Such as figure 1 As shown in FIG. 2 , a semiconductor element 102 is mounted on a lead frame 101 and sealed by an insulating sealing portion 107 made of resin. and, in figure 1 Only the position of the insulating seal 107 is shown in .

[0087] The semiconductor element 102 is, for example, a switching element for electric power or the like. If a specific example is given, it is as follows figure 2 Two field effect transistors (FETs) made of nitride semiconductors are integrally formed on a substrate as shown. A first nitride semiconductor layer 502 serving as a channel layer and a second nitride semiconductor layer 503 serving as an electron supply layer are sequentially formed over a substrate 501 . The first nitride semiconductor layer 502 may be, for example, gallium nitride (GaN), and the second nitride semiconductor layer 503 may be, for example, aluminum galliu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An objective of the present invention is to implement a small-sized semiconductor device that satisfies clearances required to secure the dielectric strength and allows flow of a large current. The semiconductor device includes a semiconductor element (102) and a lead frame (101). The lead frame (101) includes a first lead (121), a second lead (122), a third lead (123), a fourth lead (124), and a fifth lead (125) placed parallel to one another. The first and second leads are placed adjoining to each other and constitute a first lead group(127), and the third and fourth leads are placed adjoining to each other and constitute a second lead group(128). The spacing between the first lead group and the fifth lead, the spacing between the second lead group and the fifth lead, and the spacing between the first lead group and the second lead group are larger than the spacing between the first lead and the second lead and the spacing between the third lead and the fourth lead.

Description

technical field [0001] The present invention relates to a semiconductor device and a lead frame, in particular to a semiconductor device capable of bidirectional switching and a lead frame thereof. Background technique [0002] As a case where a power semiconductor element composed of a nitride semiconductor or the like is mounted on a package, there are known Figure 11 A structure as shown (for example, patent document 1). Such as Figure 11 As shown, the semiconductor device 300 has a lead frame. The lead frame has a die pad 304 integral with the header 303 . Furthermore, there are lead terminals 310 , 311 , 312 , 313 , and 314 extending from the same edge of the semiconductor device 300 over the periphery of the protective case 305 . The lead terminals 312 are integrally formed with the die pad 304 . The protective case 305 covers parts of the upper surface and the bottom surface of the lead frame. [0003] The semiconductor device 300 has a semiconductor element 301...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/495H01L23/00H01L23/488H01L23/31
CPCH01L2224/45124H01L2224/0603H01L2924/0105H01L2924/01082H01L2924/01004H01L2224/48699H01L23/3142H01L2924/20752H01L23/49562H01L2924/01019H01L2924/01029H01L2924/01028H01L2224/48472H01L2224/48091H01L2224/85439H01L2224/49171H01L2924/014H01L2924/01013H01L2924/30107H01L24/49H01L2224/45015H01L24/45H01L2224/48599H01L24/06H01L2924/20753H01L2924/3011H01L2924/01047H01L23/3107H01L2924/01079H01L24/48H01L2224/48747H01L2224/48647H01L2224/48247H01L2224/04042H01L2224/05647H01L2224/4903H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/20754H01L23/49575H01L2924/01074H01L2924/01078H01L2224/49111H01L2924/01014H01L2224/45144H01L2924/01031H01L2924/1306H01L2224/48639H01L2224/48739H01L2924/00014H01L2924/00H01L2924/00012
Inventor 藤原诚司孙卓彦渡边厚司
Owner PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap