Silicon epitaxial film thickness measuring method and device
A technology for epitaxial film and thickness measurement, which is applied in the direction of measuring devices, electromagnetic measuring devices, electric/magnetic thickness measurement, etc., can solve problems such as complicated operation, requirements for doping concentration, and requirements for substrate doping concentration, etc., to avoid Effects of Pollution, Elimination of Impacts, and Increased Costs
Active Publication Date: 2011-06-01
CSMC TECH FAB2 CO LTD
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[0005] In view of this, it is necessary to propose a method for measuring epitaxial film thickness in view of the above-mentioned problems that the measurement of epitaxial film thickness requires substrate doping concentration and complicated operation
[0006] In addition, it is also necessary to propose a measuring device for epitaxial film thickness in view of the above-mentioned problems that the measurement of epitaxial film thickness requires substrate doping concentration and complicated operation.
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[0023] The technical solutions and other beneficial effects of the present invention will be apparent through the detailed description of specific embodiments of the present invention below in conjunction with the accompanying drawings.
[0024] Two-probe thickness measurement equipment (such as ADE's thickness measurement equipment) is used in the semiconductor industry to test the overall thickness, flatness, and warpage of wafers. It is not demanding on the test wafer itself. Using the above-mentioned equipment for thickness measurement does not require additional cost and is compatible with the existing epitaxial layer flatness testing process.
[0025] The epitaxial film thickness measuring method comprises the steps of:
[0026] Two-probe thickness measuring equipment is used to measure the thickness of the epitaxial wafer before epitaxy to obtain the thickness value of the epitaxial wafer before epitaxy.
[0027] figure 1 It is a schematic diagram of two-probe thickn...
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The invention relates to an epitaxial film thickness measuring method. The method comprises the following steps: measuring the thickness of an epitaxial film before epitaxy by adopting two-probe thickness measuring equipment to obtain a thickness value of the epitaxial film before epitaxy; and measuring the thickness of the epitaxial film after epitaxy by adopting the two-probe thickness measuring equipment to obtain a thickness value of the epitaxial film after epitaxy; and subtracting the measured thickness value of the epitaxial film before epitaxy from the measured thickness value of the epitaxial film after epitaxy to calculate a difference value so as to obtain the epitaxial film thickness. In the method, the doping concentration of the silicon wafer substrate is not specially required, and the silicon wafer substrate does not require a heavily doped substrate, so that cost of partial process is reduced, impurities in the heavily doped substrate are prevented from polluting the epitaxial cavity, the influence on the next lightly doping epitaxy process of a lightly doped substrate is eliminated, and extra additional cost is not required. The method can be compatible with the existing epitaxial layer flatness testing process.
Description
【Technical field】 [0001] The invention relates to a thickness measuring method and device, in particular to a silicon epitaxial film thickness measuring method and device. 【Background technique】 [0002] The epitaxial process is an important process in the semiconductor process, and its purpose is to grow a single crystal silicon epitaxial layer with low defect and controllable resistivity on the silicon substrate. The thickness of the epitaxial film directly affects the parameter performance of semiconductor products, and it is very important to accurately measure the thickness of the epitaxial film. [0003] At present, the industry uses Fourier Transform Infrared Spectrometer (FTIR) infrared interferometry to test the epitaxial film thickness. This method requires that the substrate doping concentration of the semiconductor silicon wafer is more than 100 times higher than that of the epitaxial layer, and it is generally required to use a heavily doped substrate. For the...
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Login to View More IPC IPC(8): G01B7/06G01B11/06H01L21/66
Inventor 张元
Owner CSMC TECH FAB2 CO LTD