Method for cleaning polymer on side wall of etching chamber and contact hole forming method

Abstract

The invention discloses a method for cleaning a polymer on the side wall of an etching chamber and a contact hole forming method. The method for cleaning the polymer on the side wall of the etching chamber comprises: introducing a gas into the etching chamber, and setting a preset working frequency; and reducing the power of the etching chamber whole the cleaning time increases, and obtaining theoptimal thickness of the polymer on the side wall of the etching chamber. In the invention, the line width of a contact hole formed in the etching chamber reaches a target size.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for cleaning the sidewall polymer of an etching chamber and a method for forming a contact hole. Background technique [0002] In the manufacture of integrated circuits, materials deposited on semiconductor substrates, such as silicon dioxide, silicon nitride, polysilicon, metal, metal silicide, and single crystal silicon, are usually etched in a predetermined pattern by an etching process. gates, vias, contact holes, trenches or interconnect lines. [0003] During the etching process, etch residues (often referred to as polymers) are deposited on the walls of the etch chamber and on the surfaces of other components. The composition of the etch residue depends on the type of evaporated etching gas, the The material to be etched, and the chemical composition of the mask layer on the substrate. For example, when a metal layer, such as aluminum, etc. i...

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Problems solved by technology

[0006] However, after the above cleaning method cleans the etching chamber, because the polymer is cleaned too cleanly, the line width after the subsequent contact hole etching is too small, and the target size cannot be reached.

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