Unlock instant, AI-driven research and patent intelligence for your innovation.

Nitride light emitting diode having composite double current spreading layer

A technology of light-emitting diodes and current expansion layers, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high current density, current crowding, and effective improvement of the limited light efficiency level, so as to improve the electrostatic breakdown voltage and avoid Effect of current crowding and improvement of luminous efficiency

Active Publication Date: 2012-11-14
QUANZHOU SANAN SEMICON TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the electrode flowing from the n-electrode 109 to the p-electrode 108 will be biased towards the closer line, this will cause some parts of the current density to be too high, resulting in current crowding (current crowding), thereby limiting the effective improvement of the light efficiency level

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride light emitting diode having composite double current spreading layer
  • Nitride light emitting diode having composite double current spreading layer
  • Nitride light emitting diode having composite double current spreading layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] figure 2 It is a schematic cross-sectional view of the structure of a nitride light-emitting diode module (LED module) according to Example 2 of the present invention. The nitride light-emitting diode assembly of this embodiment has a structure in which the following layers are sequentially stacked on the sapphire substrate 100:

[0050] (1) The buffer layer 101 made of gallium nitride (GaN), aluminum nitride (AlN) or gallium aluminum nitride (GaAlN) has a film thickness of 200 angstroms to 500 angstroms.

[0051] (2) The n-type nitride semiconductor layer 102 made of Si-doped GaN has a film thickness of 20000 angstroms to 40000 angstroms.

[0052] (3) The composite double current spreading layer 103 formed by stacking the first current spreading layer and the second current spreading layer sequentially has a film thickness of 1000 angstroms to 20000 angstroms. The first current spreading layer 103a is a distributed insulating layer formed on the n-type nitride semic...

Embodiment 2

[0059] Figure 4 It is a schematic cross-sectional view of the structure of the nitride light-emitting diode module according to the second embodiment of the present invention. Compared with Embodiment 1, this embodiment has a composite double current spreading layer in which a graded silicon-doped n-type layer 103b is added between the first current spreading layer and the second current spreading layer, and its film thickness is 200 angstroms to 5000 angstroms. The graded silicon-doped n-type layer 103b is designed such that the silicon doping concentration is low-doped 1×10 17 cm -3 Gradient to high doping 1×10 19 cm -3 The n-type nitride semiconductor layer is formed by secondary epitaxy, and its purpose is to use the graded silicon-doped n-type nitride semiconductor layer to repair and improve the first current spreading layer of surface defects caused by ion implantation, and then The lattice quality of the nitride semiconductor layer after the secondary epitaxy ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a nitride light emitting diode having a composite double current spreading layer. The composite double current spreading layer is a composite semiconductor layer which consists of a first current spreading layer and a second current spreading layer in a sequentially superposed manner; the first current spreading layer is formed on a distribution insulated layer of an n-type nitride semiconductor layer and the second current spreading layer is formed by mutually superposing u-type nitride semiconductor layers and n-type nitride semiconductor layers; and the composite double current spreading layer is connected with the n-type nitride semiconductor layers and an active layer respectively. In the composite double current spreading layer arranged on the nitride light emitting diode, the current can be distributed over the entire light emitting area quite evenly to avoid current crowding, therefore, both the light emitting efficiency of a nitride light emitting diode assembly and the electrostatic breakdown voltage can be raised effectively.

Description

technical field [0001] The invention relates to a nitride semiconductor light-emitting device, more specifically a nitride light-emitting diode with a compound current spreading layer (Compound current spreading layer). Background technique [0002] In recent years, the development of semiconductor lighting technology represented by nitride semiconductor materials has attracted worldwide attention. With the continuous improvement of epitaxy and chip process technology, the luminous efficiency of nitride light-emitting diodes has been continuously improved. However, in order to popularize semiconductor lighting in a real sense, it still needs to continue to improve on the existing level of light efficiency. [0003] Such as figure 1 It is a structural diagram of a general nitride light-emitting diode and a schematic diagram of its current path. On a sapphire substrate 100, a buffer layer 101, an n-type nitride semiconductor layer 102, a light-emitting layer 104, a p-type co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/12H01L33/00
CPCH01L33/145H01L33/007H01L33/32H01L33/14H01L33/025
Inventor 叶孟欣吴志强黄少华周启伦吕兴维林科闯
Owner QUANZHOU SANAN SEMICON TECH CO LTD