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Substrate processing apparatus

A substrate processing device and substrate surface technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as complex process performance of the overall structure, improve process execution efficiency, increase density, and easy design Effect

Inactive Publication Date: 2013-06-26
LIGADP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, conventionally, in order to uniformly generate plasma inside the chamber, the pitch of the antennas was adjusted, or the thickness or structure of the dielectric plate was changed. Therefore, there was a problem that the overall structure became complicated and there was a limit to the improvement of the process performance.

Method used

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Embodiment Construction

[0034] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0035] In describing the structures of the various embodiments of the present invention, the same reference numerals are attached to the same or similar components, and repeated descriptions are omitted.

[0036] Figure 1 to Figure 3 It is a diagram illustrating a substrate processing apparatus of the antenna arrangement structure according to the first embodiment of the present invention; figure 2 is a cross-sectional view of a guide frame illustrating an antenna arrangement structure; image 3 It is a plan view illustrating an antenna arrangement structure.

[0037] Such as figure 1 As shown, the substrate processing apparatus according to the present invention includes a chamber main body 11, a substrate mounting table 15 provided in the chamber main body 11 and on which a substrate S is mounted, a lower electrode 17, and a guide...

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PUM

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Abstract

The invention provides a substrate processing apparatus, wherein the outside of the chamber (the atmosphere) and the internal of the chamber (vacuum environment) are respectively provided with antennae. Meanwhile, the antennae arranged outside the chamber is arranged in the central part and the antennae arranged inside the chamber is set to be close to the wall side of the chamber. Therefore, a plasma is uniformly formed on the whole and the density of the plasma is improved. Meanwhile, the processing efficiency of the substrate is also increased.

Description

technical field [0001] The present invention relates to a substrate processing device that generates plasma in a chamber to perform a substrate surface processing process. Background technique [0002] In the manufacturing process of electronic devices such as large-scale integrated circuits and flat panel displays, a vacuum treatment process for substrates is performed. [0003] Such a vacuum treatment process refers to a method of introducing gas into the chamber, forming plasma by high-voltage discharge, and physically sputtering substances on the surface of the substrate by the accelerating force of the plasma; and by the active species of the plasma A method of chemically breaking down substances on the surface of a substrate. [0004] Substrate processing apparatuses using plasma are classified into a capacitively coupled plasma (CCP) type and an inductively coupled plasma (ICP) type according to a plasma generation method. [0005] The CCP method applies RF power to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/505C23C16/513
Inventor 孙亨圭
Owner LIGADP