Preparation method of core shell type nanowire

A technology of nanowires and nanowire arrays is applied in the field of laser deposition preparation of core-shell nanowires and the growth of zinc oxide-based nanowire heterojunctions, which can solve the problem of expensive metal-organic vapor deposition equipment and affecting nanowire heterojunctions. Uniformity, irregularity of zinc oxide nanowires, etc., to achieve the effect of convenient shell thickness control, uniform heterojunction, and improved utilization

Inactive Publication Date: 2012-08-15
UNIV OF JINAN
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Problems solved by technology

Secondly, the tendency of ZnO nanowires grown by this method is also irregular, which also affects the uniformity of the prepared nanowire heterojunction.
Finally, metal-organic vapor deposition equipment is expensive and often requires the use of toxic metal-organic gases as precursors

Method used

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  • Preparation method of core shell type nanowire
  • Preparation method of core shell type nanowire
  • Preparation method of core shell type nanowire

Examples

Experimental program
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Embodiment 1

[0021] (ZnO / Zn 0.9 Mg 0.1 Preparation of O core-shell nanowires)

[0022] (1) Using zinc oxide powder with a purity of 99.999% as a raw material, the target material of zinc oxide is made through tableting and sintering processes.

[0023] (2) Zinc oxide thin film material is grown by traditional low-pressure pulse deposition process. The specific growth parameters are as follows: the target is a zinc oxide target as described in (1) preparation method, the growth temperature is 650°C, and the growth pressure is 10 -4 mbar, the background pressure is high-purity oxygen, and the substrate is sapphire (Al 2 o 3 ), size 1×1cm 2 , the laser working conditions are: wavelength 248nm, frequency 10Hz, energy density 1-2J / cm 2 , the growth time is 10 minutes.

[0024] (3) A low-density zinc oxide nanowire array is grown by a high-voltage pulsed laser ablation method. The specific growth parameters are as follows: the growth temperature is 850 ° C, the growth pressure is 100 mba...

Embodiment 2

[0026] Embodiment 2 (ZnO / (Zn 0.9 Mg 0.1 O / ZnO / Zn 0.9 Mg 0.1 O) Preparation of core-multi-shell (quantum well) nanowires)

[0027] (1-4) step with embodiment 1, prepare ZnO / Zn 0.9 Mg 0.1 O core-shell nanowire array samples.

[0028] (5) with ZnO / Zn 0.9 Mg 0.1 O core-shell nanowires are used as templates, and the target material is replaced with zinc oxide (ZnO) in situ, and the zinc oxide shell layer is epitaxially grown under the following low-voltage pulse deposition process conditions: the growth temperature is 650 ° C, and the growth pressure is 10 -4 mbar, the background pressure is high-purity oxygen, the working conditions of the laser are: wavelength 248nm, frequency 1Hz, energy density 1-2J / cm 2 . And strictly control the growth thickness of the zinc oxide shell through the growth time, so as to grow ZnO / Zn 0.9 Mg 0.1 O / ZnO core-shell nanowires.

[0029] (6) with ZnO / Zn 0.9 Mg 0.1 O / ZnO core-shell nanowires are used as templates, and the target is replace...

Embodiment 3

[0030] Embodiment 3 (growth of different composition multi-shell nanowires)

[0031] (1-6) synchronous example 2, as connotation and extension of the present invention, its shell composition can be following multiple and is suitable for laser pulse deposition material: Zn x Mg 1-x O(0≤x≤0.3); Al 2 o 3 ; MgO; MnO; ZnO: X (X: N; P; As, etc.); under the technical process conditions described in the present invention, the number of shell layers can be 1-15. As the above-mentioned processes included in the present invention, they are not listed one by one in this specification, but are also included in the present invention.

[0032] In summary of the above implementation examples, the process of the present invention can realize the growth of a class of core-shell nanowires with a uniform structure. Core-shell semiconductor nanowires are of vital scientific and practical significance for the assembly of semiconductor heterostructures of ZnO nanowires, light-emitting diode devi...

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Abstract

The invention relates to a laser deposition preparation method of a core shell type nanowire, belongs to the field of semiconductor nano materials and heterostructures of the semiconductor nano materials, and particularly relates to the growth of a heterojunction of a zinc-oxide-based nanowire, which uses a low-density nanowire array as a template to achieve uniform structural and optical properties. The low-density nanowire array is used as the template, and a shell layer grows along the epitaxy of the nanowire through the low-voltage pulse laser deposition technology, thereby effectively overcoming the shadow effect in the conventional preparation technology; through the replacement of target materials in situ, the nanowire with multiple shell layers can be conveniently prepared, and the thicknesses of the shell layers can be conveniently controlled; and the core shell type nanowire with the controllable structural and optical properties is acquired, and the heterojunction of the core shell type nanowire is evener than that of a nanowire prepared in the prior art.

Description

technical field [0001] The invention relates to a laser deposition preparation method of a core-shell nanowire, belonging to the field of semiconductor nanomaterials and heterogeneous structures. It particularly relates to the growth of a zinc oxide-based nanowire heterojunction with uniform structure and optical properties by using a low-density nanowire array as a template. Background technique [0002] The semiconductor heterojunction is formed by connecting two single crystal semiconductors with different band gap energies due to composition modulation. Heterojunctions can be classified into homo-type (n-n or p-p) and hetero-type (p-n) heterojunctions. The homogeneous heterojunction can form a barrier that confines carriers, thereby effectively shortening the diffusion length of carriers. The heterojunction can improve the injection efficiency of electrons or holes by changing the relative size of the bandgap energy on both sides of the junction. When the thickness of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C23C14/28C23C14/08B82B3/00
Inventor 曹丙强段广彬徐红燕王介强陶珍东
Owner UNIV OF JINAN
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