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Ion beam transmission device

A transmission device and ion beam technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the extraction and transmission of ion beams, the limitation of beam current intensity reaching the target, and the increase of the lateral size of ion beams, etc., to achieve Improve injection efficiency, reduce flow loss, and improve accuracy

Active Publication Date: 2014-03-19
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the ion beam transmission system, it is often necessary to set the electrodes to make the ion beam deflect according to the preset requirements, or to focus and accelerate and decelerate while deflecting, but the existence of any electrostatic field change in the ion beam transmission , will repel the electrons in the ion beam from the ion beam, resulting in a large amount of positive space charges in the ion beam (ie space charge effect), in this case, the lateral size of the ion beam will increase sharply, resulting in Before the ion beam reaches the target, it hits the physical boundary of the ion beam transmission system and is lost, which will undoubtedly affect the extraction and transmission of the ion beam, and will adversely limit the beam intensity reaching the target

Method used

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Experimental program
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Embodiment 1

[0022] One or a pair of electrodes are arranged on one or both sides of the beam transmission path, figure 1 Shown is the situation where a pair of electrodes 11 and 12 are set. When the ion beam is incident from the left side of the figure, according to the different electrode parameters, the ion beam exiting to the right will produce upward or downward along the paper. deflection( figure 1 Shown for downward deflection) with simultaneous effects such as focusing, defocusing, or acceleration and deceleration. A magnet is arranged around the pair of electrodes 11, 12, for example figure 1 A pair of magnets 21 and 22 whose middle connection direction is completely perpendicular or nearly perpendicular to the plane where the electrodes are located. In the area between the pair of magnets, the lines of magnetic force are basically distributed along the vertical direction, so the electrons in the ion beam will helically circle on the vertical lines of force under the action of t...

Embodiment 2

[0024] Such as figure 2 As shown, an electrode 31 is arranged on one side of the beam transmission path. When the ion beam is transmitted along the direction perpendicular to the paper, it will deflect upward or downward along the paper according to the electrode parameters, and Simultaneously produce effects such as focusing, defocusing or acceleration and deceleration. A magnet is set around the electrode 31, for example figure 2 A pair of magnets 41, 42 with the connecting line direction parallel to the plane where the electrodes are located. At this time, only few or almost no magnetic lines of force pass through the electrodes, so electrons will not be absorbed by the electrodes, and the electrodes 31 can be at positive or negative potentials. In this embodiment, when the electrons in the ion beam deviate from the beam path and approach the electrode, they will be bounced back into the ion beam under the action of the magnetic field force. When the electrode 31 is at ...

Embodiment 3

[0026] Such as image 3 As shown, in this embodiment, on the basis of Embodiment 2, an electrode 32 and a pair of magnets 51, 52 are added symmetrically on the other side of the beam transmission path. Similarly, the electrode 32 can also be at a positive potential or negative potential. According to the same principle as in Embodiment 2, the electrons in this embodiment can be better confined inside the ion beam.

[0027] It is obvious that the above three embodiments are only examples of the arrangement of the magnets. In fact, it is feasible to arrange the electrodes and the magnets in any relative position, as long as the magnetic field of the magnets can surround the electrodes to realize the confinement of electrons. the goal of.

[0028] To sum up, the present invention can minimize the lateral expansion of the beam current when the ion beam is deflected, focused, accelerated and decelerated, and the shape of the beam current remains basically unchanged, thereby reduc...

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Abstract

The invention discloses an ion beam transmission device. The device comprises one or more electrodes, wherein one or more pairs of magnets are arranged on the periphery of one or more electrodes; the magnetic fields of one or more magnets restrict electrons passing through an ion beam of the device in the ion beam. When the ion beam is deflected, focused, defocused, accelerated and decelerated by an electric field generated by the electrode, the device ensures that the transverse expansion of current of the ion beam is minimized, the beam current shape is basically maintained, so that current strength loss of the beam current is reduced, the accuracy of injection dosage of the ion beam and the injection efficiency of the whole ion beam transmission system are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an ion beam transmission device. Background technique [0002] The ion implantation method is used to introduce atoms or molecules, usually called impurities, into the target substrate, thereby changing the physical and chemical properties of the substrate material. Of particular interest is the doping of single or polycrystalline silicon by ion implantation, a routine process used in the manufacture of modern integrated circuits. As the production of semiconductor products gradually tends to larger semiconductor wafers (from 8 inches to 12 inches, and now has developed to 18 inches) process, single wafer process (processing one wafer at a time) has been widely used recently. The larger the wafer workpiece, the longer the time required for implantation, and it is becoming more and more difficult to achieve a certain uniformity of implantation dose and implantation angl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
Inventor 钱锋陈炯
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY