Electrode lead-out structure in STI process

Abstract

The present invention discloses an electrode lead-out structure in a STI (Shallow Trench Isolation) process, wherein an active region is isolated by a shallow trench, a buried layer is formed at the bottom of the shallow trench, the buried layer enters into the active region and connects with a doped area 1 where the electrode is needed to be led out in the active region, and a deep-groove contact hole is manufactured in an oxide layer of the shallow trench to connect with the buried layer so as to lead the electrode out of the doped area 1. The electrode lead-out structure in the present invention can reduce area of the device, reduce resistance and parasitic capacitance of the led-out electrode, and improve characteristic frequency of the device.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to an electrode lead-out structure in a shallow trench isolation process. Background technique [0002] Such as figure 1 As shown, it is a structural diagram of an existing bipolar transistor, the active region is isolated by a shallow trench 104, and includes a collector region 102, a base region and an emitter region 107; the collector region 102 shown is composed of an epitaxial layer , the bottom is connected to a high-concentration buried layer 101, and the collector region 102 is connected to the high-energy ion implantation region 103 of the active region separated by the buried layer 101, and makes contact on the high-energy ion implantation region 103 Draw out the collector; the base region is formed on the top of the collector region 102, including an intrinsic base region 105 and an extrinsic base region 106, connected to the collector region 102 through the i...

AI Technical Summary

Problems solved by technology

Since the collector electrode is drawn out through the contact of the collector region 102 with the buried layer 101 and through the buried layer 101 bypassing the shallow trench 104 and the oxide layer and the high-energy ion implantation region 103, the occupied area is relatively large. And the collector parasitic capacitance is large

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