Comb-shaped gate composite source MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof

Abstract

The invention provides a composite source MOS (Metal Oxide Semiconductor) transistor with schottky barrier and comb-shaped gate structures and a manufacturing method thereof. The composite source MOS transistor comprises a control gate electrode layer, a gate dielectric layer, a semiconductor substrate, a high doped source region and a high doped drain region, wherein one side far away from the channel direction of the high doped source region is connected with a schottky source region; one end of a control gate extends towards the high doped source region; the extended gate region is an extension gate shaped like a comb; the original control gate region is a main gate; the active region covered by the extension gate is likewise a channel region with the substrate material; the high dopedsource region is formed by the high doping of semiconductor and is located on the two sides of each comb of the extension gate; and a schottky junction is formed at the channel under the schottky source region and the extension gate. Compared with the traditional MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), the composite source MOS transistor can obtain a higher conduction current,a lower leakage current and a steeper subthreshold slope under a same technological condition and a same active region size.

Description

technical field [0001] The invention belongs to the field of field effect transistor logic devices and circuits in CMOS ultra large integrated circuits (ULSI), and in particular relates to a composite source MOS transistor combined with a Schottky barrier (Schottky Barrier) and a comb gate structure and a manufacturing method thereof. Background technique [0002] As the size of metal-oxide-silicon field-effect transistors (MOSFETs) continues to shrink, especially when the feature size of the device enters the nanoscale, the negative impact of the short channel effect of the device becomes more and more obvious. Drain-induced barrier-lowering effect (DIBL) and band-band tunneling effect increase the off-state leakage current of the device, which increases the power consumption of the integrated circuit along with the decrease of the threshold voltage of the device. Not only that, the subthreshold slope of traditional MOSFET devices cannot be reduced synchronously with the re...

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Problems solved by technology

TFET has many excellent characteristics such as low leakage current, low sub-threshold slope, low operating voltage and low power consumption. However, due to the limitation of source junction tunneling probability and tunneling area, TFET faces low open current problem

The patent (CN101719517A) proposes a Schottky tunneling transistor, which solves the source-drain self-alignment problem of TFET devices by using the Schottky junction in the source-drain, but it also faces the problem of small on-state current

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