Storage element and storage device

Abstract

Provided are a memory element and a memory device. A memory layer is provided with an ion source layer. The ion source layer includes Zr (zirconium), Cu (copper), and Al (aluminum) as a metal element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element). The amount of Al in the ion source layer is 30 to 50 atomic percent. The amount of Zr is preferably 7.5 to 25 atomic percent, and more preferably, the composition ratio of Zr to the chalcogen element in total included in the ion source layer (=Zr (atomic percent) / chalcogen element in total (atomic percent)) falls within a range from 0.2 to 0.74.

Description

technical field [0001] The present invention relates to a memory element capable of storing binary information or multi-valued information including values ​​larger than binary in response to changes in electrical properties in a memory layer including an ion source layer. Background technique [0002] As a nonvolatile memory in which information is not erased even when the power is turned off, types such as flash memory, FeRAM (Ferroelectric Random Access Memory), MRAM (Magnetoresistive Random Access Memory), and the like have previously been proposed. These types of memory are capable of retaining written information for long periods of time without power supply. However, each of these types of memory has its own advantages and disadvantages. In other words, flash memory has a higher packing density but has a disadvantage in terms of operating speed. FeRAM has limitations in terms of miniaturization to build higher packing densities, and also has problems in terms of man...

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Problems solved by technology

MRAM has problems with power consumption

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