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Electronic device

A technology for electronic devices and driving electrodes, which is applied in relays, electrical components, waveguide devices, etc., and can solve problems such as contact bonding

Inactive Publication Date: 2014-03-12
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Leakage current Ia is finally transmitted to the contacts of high-frequency signal lines, which is likely the cause of contact bonding

Method used

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Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0028] refer to Figure 1-6 A description is given of the MEMS switch 1 of the first embodiment. Figures 2A-2C are respectively along figure 1 Cross-sectional views of the MEMS switch 1 taken along line A-A, line B-B, and line C-C in FIG.

[0029] Note that in Figure 1-3 In , parts that do not correspond to the cross section are also hatched to facilitate understanding of the shape of each part.

[0030] refer to figure 1 and 2, MEMS switch 1 is a high-frequency MEMS switch, such as an RF-MEMS switch. The MEMS switch 1 includes a substrate 11 , a lower contact electrode 12 , an upper contact electrode 13 , a lower driving electrode 14 , an upper driving electrode 15 , and a ground electrode 16 .

[0031] Substrate 11 is an SOI (Silicon On Insulator) substrate including three layers, namely, support substrate 11a, intermediate oxide film 11b, and active layer 11c. Support substrate 11a is made of silicon and has a thickness of, for example, about 500 μm. The intermedia...

no. 2 example

[0072] A description is given of the MEMS switch 1B of the second embodiment.

[0073] In the MEMS switch 1B of the second embodiment, the same parts as those of the MEMS switch 1 of the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted or simplified. The same applies to the third embodiment and other contents described later.

[0074] exist Figure 7 In the MEMS switch 1B shown in , the ground electrode 16B is formed in such a manner that the side portion 16Ba of the ground electrode 16B close to the high-frequency signal line SL protrudes inward so as to approach the lower contact electrode 12 .

[0075]The lower contact electrode 12 is formed of an elongated electrode portion 12a having a small thickness and formed in close contact with the movable portion KB, and an anchor portion 12b formed at one end of the electrode portion 12a.

[0076] The electrode portion 12a has a smaller width than the anchor portion 12b. If side ...

no. 3 example

[0081] A description is given of the MEMS switch 1C of the third embodiment.

[0082] exist Figure 8 In the MEMS switch 1C shown in , the ground electrode 16C is formed to partially cover the lower drive electrode 14 so that the ground electrode 16C and the lower drive electrode 14 are electrically connected to each other.

[0083] Specifically, the ground electrode 16C has an extension portion 162 protruding inward near a connection portion where the side portion 16Cb and the side portion 16Cc are connected to each other. The extension portion 162 is connected to a portion of the lower driving electrode 14 in an overlapping relationship.

[0084] This structure enables the lower drive electrode 14 to be firmly grounded. Furthermore, this structure does not require a bump 19d dedicated to the ground connection of the lower drive electrode 14 (see image 3 ), which results in a reduction in the number of terminals and wires.

[0085] The extension portion 162 is preferably...

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PUM

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Abstract

An electronic device includes a substrate including an active layer, a signal electrode formed on a surface of the active layer, a first driving electrode that is formed on the surface of the active layer and is connected to a ground, and a second driving electrode including a first part that is formed on the surface of the active layer and a second part that is connected to the first part and is provided above the first driving electrode. The substrate is provided with a loop-like groove that penetrates through the active layer and encompasses the first part.

Description

technical field [0001] Embodiments discussed herein relate to electronic devices formed on the surface of a substrate in which an active layer is disposed on an insulating layer. Background technique [0002] In general, in response to demands for miniaturization and high performance for high-frequency elements (RF elements) used in mobile phones, development of MEMS switches as high-frequency (RF) switches by using MEMS (Micro Electro Mechanical Systems) technology is underway. Compared with traditional semiconductor switches, MEMS switches have low loss, high isolation, and good distortion characteristics due to their own characteristics. [0003] Various types of MEMS switches having different structures have conventionally been proposed (see Japanese National Publication of International Patent Application No. 2005-528751 and Japanese Laid-Open Patent Nos. 2005-293918 and 2006-210530). [0004] FIG. 11 is a top view showing a conventional MEMS switch 80j, and FIGS. 12A-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B3/00H01H59/00
CPCH01P1/12H01H59/0009
Inventor 中谷忠司井上广章上田知史
Owner FUJITSU LTD