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Doherty power amplification device and power amplification method

A main power amplifier and signal power technology, which is applied to power amplifiers, components of amplifying devices, amplifiers, etc., can solve problems such as limited performance improvement space, inability to meet green environmental protection requirements, etc., to improve power amplifier efficiency, take into account costs, and ensure convenience. sexual effect

Inactive Publication Date: 2011-08-17
ZTE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mainstream LDMOS device in the industry has been developed to the eighth generation, and its cost is low, but the room for performance improvement is very limited, and it cannot meet the requirements of environmental protection.

Method used

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  • Doherty power amplification device and power amplification method
  • Doherty power amplification device and power amplification method
  • Doherty power amplification device and power amplification method

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Embodiment Construction

[0030] Judging from the signal power spectrum distribution of different standards in the current communication system, 70%-80% of the energy output by the power amplifier is concentrated around the average power, that is, most of the working current of the power amplifier is contributed by the main power amplifier. Therefore, the efficiency of the main power amplifier is improved. It is of great significance to improve the efficiency of the entire power amplifier.

[0031] The main power amplifier device in the Doherty power amplifier in the present invention is used to amplify signal power by using a High Electron Mobility Transistor (HEMT for short) device.

[0032] High electron mobility transistor (HEMT) devices are gallium nitride (GaN) based devices.

[0033] The corresponding power amplification method includes: in the Doherty power amplifier device, HEMT devices are used to amplify the signal power of the main power amplifier device. HEMT devices are gallium nitride (...

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Abstract

The invention discloses a Doherty power amplification device and a power amplification method. The device comprises a peak power amplification device and a main power amplification device, wherein the peak power amplification device is used for adopting a laterally diffused metal oxide semiconductor (LDMOS) device for performing signal power amplification; and the main power amplification device is used for adopting a high electron mobility transistor (HEMT) device for performing the signal power amplification. The HEMT device is adopted as a main power amplifier. By adopting the invention, compared with the existing Doherty power amplifier which adopts LDMOSs as a main power amplifier and an auxiliary power amplifier, the power amplification efficiency of the main power amplifier in the Doherty power amplifier can be upgraded, so that the power amplification efficiency of the whole Doherty power amplifier can be greatly upgraded.

Description

technical field [0001] The invention relates to the technical field of radio frequency power amplifier design, in particular to a Doherty power amplifier device and a power amplification method. Background technique [0002] In the face of increasingly fierce market competition, the efficiency of base station products has become an important reference point for industry competition. The efficiency improvement of power amplifier devices, which is the main component that determines efficiency, has also become the core point in base stations. The industry has invested manpower and material resources to improve efficiency. Research on improving technology, currently the most widely used technology includes Doherty technology, power amplifier manufacturers have begun mass production and application of Doherty power amplifiers, how to further improve the efficiency of this technology is also particularly important. [0003] Doherty technology was originally applied to traveling wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/07H03F3/20
CPCH03F3/245H03F1/0288H03F3/195H03F3/68
Inventor 崔晓俊陈化璋段斌刘建利
Owner ZTE CORP