Thermal field structure of polysilicon ingot casting furnace

A technology of polysilicon ingot casting furnace and thermal field, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., and can solve problems affecting the crystallization quality of polycrystalline silicon ingots, etc.

Active Publication Date: 2011-08-24
深圳市石金科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the thermal field of the existing polysilicon ingot casting furnace cannot provide a growth environment with a good temperature gradient field for the polysilicon ingot, thus affecting the crystallization quality of the polysilicon ingot

Method used

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  • Thermal field structure of polysilicon ingot casting furnace
  • Thermal field structure of polysilicon ingot casting furnace
  • Thermal field structure of polysilicon ingot casting furnace

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Embodiment Construction

[0021] The general idea of ​​the technical solution of the present invention is: the thermal insulation cage body is composed of an upper thermal insulation body, a lower thermal insulation body and a thermal insulation bottom plate to form a sealed thermal field chamber, and the lower thermal insulation body can slide up and down relative to the upper thermal insulation body through a lifting mechanism. During the lifting process of the lower insulation body, due to the high and low temperature difference in the thermal field chamber, a vertical temperature gradient field is formed on the crystallization surface of silicon. By controlling heat dissipation and heating, silicon can be oriented and crystallized, and its crystallization is solidified. The process is effectively controlled to improve the quality of the polysilicon ingot, and at the same time shorten the whole process time, reduce the energy consumption in the crystallization process, and increase the unit production...

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Abstract

The invention relates to a thermal field structure of a polysilicon ingot casting furnace, which comprises a furnace body, a thermal-insulation cage body and a crucible, wherein the thermal-insulation cage body is arranged inside the furnace body, the crucible is arranged inside the thermal-insulation cage body, and the thermal-insulation cage body is a sealed thermal field chamber formed by an upper thermal-insulation body, a lower thermal-insulation body and a thermal-insulation baseplate; the upper thermal-insulation body is fixed on the furnace body; the bottom of the lower thermal-insulation body is placed on the thermal-insulation baseplate, and the lower thermal-insulation body can slide up and down relative to the upper thermal-insulation body through a lifting mechanism; the crucible is placed on a heat exchange platform in a supporting structure; and the thermal-insulation baseplate is placed on supporting columns of the supporting structure for fixation. In the invention, when a silicon material is heated, melted and thermally preserved for a period of time, in a lifted process of the lower thermal-insulation body, a vertical temperature gradient field is formed on a crystallization face of the silicon material due to the vertical temperature difference inside the thermal field chamber, and the crystallographic orientation of the silicon material can be realized by controlling heat dissipating and heating, so that the quality of a polysilicon cast ingot is improved. Meanwhile, the process time is shortened, the energy consumption is decreased and the unit productivity is improved.

Description

technical field [0001] The invention relates to the technical field of a polysilicon ingot furnace, in particular to a thermal field structure of a polysilicon ingot furnace. Background technique [0002] Energy is a major focus in today's world. Extensive use of traditional energy has made environmental pollution more and more serious, posing a serious threat to the development of human society. Effective use of clean energy and emerging non-polluting energy is an inevitable trend in the development of energy technology. Solar energy is one of the inexhaustible green energy for human beings. In the utilization of solar energy, photovoltaic cells are currently the most important product. The raw material silicon used in photovoltaic cells is the main carrier of photovoltaic cells. Silicon crystals The fabrication of devices is the basis of photovoltaic cells. [0003] Polysilicon ingot furnace is a kind of silicon raw material remelting equipment, which is used to produce ...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 南志华
Owner 深圳市石金科技股份有限公司
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