Unlock instant, AI-driven research and patent intelligence for your innovation.

Source gas supply apparatus

A technology for supplying device and source gas, applied in electrical components, gaseous chemical plating, semiconductor/solid-state device manufacturing, etc., can solve the problems of poor mobility and large proportion of source gas, and achieve the effect of accurate adjustment

Inactive Publication Date: 2013-02-13
TERASEMICON CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Typically, the source gas is less mobile due to its high specific gravity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Source gas supply apparatus
  • Source gas supply apparatus
  • Source gas supply apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0081] In the detailed description of the present invention to be described later, referring to the drawings which illustrate specific embodiments in which the present invention can be carried out, these embodiments will be described in detail so that those skilled in the art can fully implement them. It should be understood that the various embodiments of the invention, although different from each other, are not mutually exclusive. For example, specific shapes, structures, and characteristics described in one embodiment can be implemented in other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the positions or arrangements of individual constituent elements in each disclosed embodiment may be changed without departing from the spirit and scope of the present invention. Therefore, the detailed description described below does not limit the present invention, and the scope of the present invention is ...

no. 1 example

[0084] figure 2 It is a detailed schematic diagram showing the configuration of the source gas supply device 200 according to an embodiment of the present invention.

[0085] refer to figure 2 , The source gas supply device 200 includes a source gas generation unit 210, a carrier gas supply unit 220, a flow control unit 230, a source gas condensation unit 240, a vapor deposition chamber 250, a bypass unit 260, a plurality of valves 271-276, and connections The gas channel 280 of the above-mentioned constituent elements.

[0086] First, the source gas generator 210 heats the source substance 212 with the heater 214 to perform a function of generating a source gas (not shown) from the source substance 212 . Here, the source substance 212 is a raw material of the source gas used in the vapor deposition process, and generally exists in a solid or liquid state at normal temperature. Furthermore, the heater 214 may heat the source material 212 present in the source gas generati...

Embodiment 2

[0117] Figure 11 It is a detailed schematic diagram showing the configuration of the source gas supply device 300 according to an embodiment of the present invention.

[0118] refer to Figure 11 , the source gas supply device 300 includes: a source gas generation unit 310, a carrier gas supply unit 320, a flow control unit 330, a source gas condensation unit 340, a sensor unit 350, a vapor deposition chamber 360, a bypass unit 370, a plurality of valves 381- 386, and the gas channel 390 connecting the above components.

[0119] First, the source gas generation unit 310, the carrier gas supply unit 320, and the flow control unit 330 perform the same functions as the source gas generation unit 210, the carrier gas supply unit 220, and the flow control unit 230 mentioned in the first embodiment above, Therefore, detailed description is omitted.

[0120] Furthermore, one end of the source gas condensing part 340 is connected to the above-mentioned source gas generating part 3...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a source gas supply apparatus for gasifying source materials which are used as raw materials for thin film deposition by chemical vapor deposition, and supplying the gas into a deposition chamber. The source gas supply apparatus (200) according to the present invention comprises: a source gas generating unit (210) for heating source materials to generate source gas; and a source gas condensation unit (240) where the source gas generated by the source gas generating unit (210) is introduced and condensed. The source gas supply apparatus (200) of the present invention enables the feeding of source gas from the source gas generating unit (210) to the source gas condensation unit (240) to proceed to condense the source gas in the source gas condensation unit (240) until the volume of condensation of the source gas condensed in the source gas condensation unit (240) reaches a saturated level. The source gas supply apparatus (200) of the present invention cuts off the feeding of source gas from the source gas generating unit (210) to the source gas condensation unit (240) after the volume of condensation of the source gas condensed in the source gas condensation unit (240) has reached the saturated level, and enables the source gas condensed in the source gas condensation unit (240) to flow into a deposition chamber (250).

Description

technical field [0001] The invention relates to a source gas supply device capable of controlling the source gas pressure in a vapor deposition chamber when film vapor deposition is performed by chemical vapor deposition. More specifically, it relates to a source gas supply device capable of accurately controlling the pressure or flow rate of the source gas in the deposition chamber by flowing a specific amount of source gas into the deposition chamber. Background technique [0002] Thin film deposition by chemical vapor deposition (Chemical Vapor Deposition: CVD) in various fields such as insulating layers and active layers of semiconductor devices, transparent electrodes of liquid crystal display devices, light-emitting layers and protective layers of electroluminescent display devices In the application, it is very important technically. [0003] Generally, the physical properties of thin films evaporated by CVD are greatly affected by CVD process conditions such as evap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205
CPCC23C16/4481
Inventor 李炳一张锡弼朴暻完宋钟镐
Owner TERASEMICON CO LTD