Method for manufacturing electronic device and peeling device used in the method

A technology for electronic devices and manufacturing methods, which are applied in semiconductor/solid-state device manufacturing, electrical solid-state device, printed circuit manufacturing, etc.

Inactive Publication Date: 2014-10-08
ASAHI GLASS CO LTD
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0028] In addition, the peeling device described in Patent Document 8 is a device for peeling a glass substrate, etc. held by adsorption on a suction sheet, from the suction sheet. Peeling without leaving the resin layer on the thin glass substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing electronic device and peeling device used in the method
  • Method for manufacturing electronic device and peeling device used in the method
  • Method for manufacturing electronic device and peeling device used in the method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0438] Examples of the present invention will be described.

[0439] First of all, for the vertical 720mm, horizontal 600mm, plate thickness 0.4mm, linear expansion coefficient 38×10 -7 A support glass substrate (manufactured by Asahi Glass Co., Ltd., AN100, non-alkali glass substrate) at / °C was cleaned by washing with pure water and UV.

[0440] Next, on the supporting glass substrate, the size of 705 mm in length and 595 mm in width is applied by a screen printing machine (coating amount: 30 g / m 2 ) Silicone for solvent-free addition reaction type release paper (Shin-Etsu Silicone Co., Ltd., KNS-320A, viscosity: 0.40 Pa·s, 100 parts by mass, platinum-based catalyst (Shin-Etsu Silicone Co., Ltd., CAT-PL-56) 2 parts by mass of the mixture.

[0441] Next, this was heated and cured at 180° C. in the air for 30 minutes to obtain a silicone resin layer with a thickness of 20 μm on the surface of the supporting glass substrate.

[0442] Secondly, for the vertical 715mm, horizon...

Embodiment 2

[0474] In Example 2, except having changed the board|substrate into the polyethylene terephthalate resin board|substrate of thickness 0.1mm, it carried out similarly to Example 1, produced the laminated body B, and performed the same test as peeling test 3. As a result, the support body and the polyethylene terephthalate resin substrate can be peeled off without damaging the laminated body B. The charged voltage of the polyethylene terephthalate resin substrate after peeling was +0.3 kV.

Embodiment 3

[0476] In Example 3, the laminate C was produced in the same manner as in Example 1 except that the substrate was changed to a mirror-finished stainless steel (SUS304) substrate with a thickness of 0.1 mm, and the same test as in the peeling test 3 was performed. As a result, the support body and the stainless steel substrate can be peeled off without damaging the laminate C. The charged voltage of the stainless steel substrate after peeling was +0.02 kV.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
surface tensionaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention provides a manufacturing method of an electronic device and a peeling device used in the method, capable of peeling and separating easily and in a short time without damaging a closely bonded substrate and resin layer. The support substrate (19b) and the resin are peeled off from the electronic device (10) with a support in which the resin layer (18b) fixed to the support substrate (19b) is closely bonded to the substrate (12b) having the electronic device component (14). In the case of a support (17b) composed of layers (18b), the main surface of the support (17b) that is not attached and then peeled off is in close contact with the fixed surface (20a) of the workbench (20), and the electronic device with the support ( 10) Fixing, inserting a blade into the interface between the resin layer (18b) of the support (17b) and the substrate (12b) that is fixed to the end face of the electronic device (10) with a support (10) fixed on the workbench (20) (30) The above-mentioned problems are solved by peeling off the support body (17b) and the electronic device (16).

Description

technical field [0001] The present invention relates to a manufacturing method of an electronic device and a peeling device used in the method. Background technique [0002] In recent years, liquid crystal display devices (LCD) and organic EL display devices (OLED) have been widely used as display devices. In particular, in the field of portable display devices such as mobile phones and mobile phones, reduction in weight and thickness of display devices is required. [0003] Similarly, electronic devices such as solar cells, thin-film secondary batteries, and semiconductor wafers with circuits formed on their surfaces are also seeking to reduce their weight and thickness. [0004] In response to this, substrates such as glass, resin, and metal used in electronic devices such as display devices are becoming thinner. [0005] In the case of a glass substrate, as a method of reducing the plate thickness, the following method is generally carried out, before or after forming t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G09F9/00G02F1/1333G09F9/30
CPCH05K3/007H01L51/56H01L51/003B65H2301/51122G02F1/1303H01L21/67092H10K71/80H10K71/00G02F1/1333G02F1/13
Inventor 江畑研一近藤聪伊藤泰则
Owner ASAHI GLASS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap