Metal vacuum sputtering device and method

A vacuum sputtering and metal technology, applied in sputtering coating, vacuum evaporation coating, metal material coating process and other directions, can solve the problems of poor consistency of frequency characteristics, large frequency difference, large variation, etc., to achieve cost Inexpensive and simple to achieve

Active Publication Date: 2011-09-14
INTERQUIP ELECTRONICS
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the frequency difference between a large number of sputtering electrode film wafers at the same time is relatively large, the variation is large, and the consistency of frequency characteristics is poor, which has become a major unfavorable factor for mass production of quartz crystal resonators and oscillators.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal vacuum sputtering device and method
  • Metal vacuum sputtering device and method
  • Metal vacuum sputtering device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Below in conjunction with the accompanying drawings, the implementation of the present invention will be further described.

[0032] figure 1 As shown, the device for realizing the present invention includes a rod-shaped metal target 1, a balance coil 2, a wafer metal tooling 3, and a frequency detector 4. The rod-shaped metal target 1 is any metal (such as: silver, copper or chromium, etc.), and the wafer metal tooling 3 Located on both sides of the rod-shaped metal ion source, a wafer 5 is installed on the inner side of the wafer tooling 3, and the metal molecules produced by the rod-shaped metal target are sputtered onto the wafer 5 under the high-speed impact of argon ions that obtain strong electromagnetic field energy, forming electrode.

[0033] A balance coil 2 is installed in the middle of the rod-shaped metal target 1, and the balance coil 2 is formed by arranging and winding a metal wire according to a certain diameter (in other embodiments, the balance coil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
Login to view more

Abstract

The invention discloses a metal vacuum sputtering device and method. The device comprises a rod-shaped metal target and a wafer tool, wherein the middle position of the rod-shaped metal target is provided with a balance coil connected with a power source, the balance coil generates an additional electromagnetic field in the case of being energized, the total electromagnetic field in a metal vacuum sputtering system is influenced by the additional electromagnetic field so as to reduce the quantity of ions reaching the surfaces of wafers near the balance coil, and finally, the thickness shear resonant frequencies of the wafers are enhanced to result in consistent sputtering thickness of the wafers on the entire wafer tool, thereby ensuring excellent frequency consistency of the wafers of the sputtered metal electrode film.

Description

technical field [0001] The invention relates to a metal vacuum sputtering system and a control method. More specifically, the present invention relates to the design of electromagnetic field direction and intensity control. Background technique [0002] Due to its frequency accuracy and stability, excellent reliability, small size and low cost, quartz crystal resonators and oscillators are widely used in modern electronic industries such as communications, computers, entertainment equipment, industrial control and other industries we are involved in. It is an indispensable and very important electronic component in the field. [0003] The metal vacuum sputtering system can be effectively used in the production of frequency control components such as quartz crystal resonators and oscillators. In the formation process of quartz crystal resonators and quartz wafer electrodes used in oscillators, it is necessary to plate a layer of metal film on both sides of the wafer in a va...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14C23C14/54
Inventor 刘青健陈清亮王艳格丁力赵敏
Owner INTERQUIP ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap