Thin film transistor with single-gate double-channel structure and manufacturing method thereof

Abstract

The invention discloses a thin film transistor with a single-gate double-channel structure and a manufacturing method thereof. The manufacturing method comprises the steps of forming a first source electrode and a first drain electrode on a base plate; depositing a first active layer, wherein the edge of the active layer is overlapped with the edges of the first source electrode and the first drain electrode; then sequentially forming a first insulation layer, a gate electrode and a second insulation layer on the first active layer; forming a second active layer on the second insulation layerin a way of corresponding to the first active layer; and forming a second source electrode and a second drain electrode on the second active layer in a way of corresponding to the first source electrode and the first drain electrode to further form the thin film transistor with the single-gate double-channel structure. The thin film transistor with the single-gate double-channel structure has the advantages that: the thin film transistor can serve as a two-way switch device or a three-state device, can be used for controlling two circuit branches with a uniform circuit behavior, has a high on state current and can serve as an inverter.

Description

technical field [0001] The invention relates to a thin film transistor and a manufacturing method thereof, in particular to a thin film transistor with a single-gate double-channel structure and a manufacturing method thereof. Background technique [0002] refer to figure 1 , which shows a cross-sectional view of a traditional single-gate single-channel thin film transistor (thin film transistor). exist figure 1 Among them, the thin film transistor a0 is basically an electronic element composed of a gate a5, a source a1, a drain a2 and an active layer a3, and an insulating layer is placed between the gate a5 and the active layer a3 separated by a4. The source a1 and the drain a2 are not in contact with each other, but are in ohmic contact with the active layer a3 through the heavily doped semiconductor layer a8 respectively. [0003] When a certain voltage is applied to the gate a5, a conductive channel is formed in the active layer a3 near the insulating layer a4. At t...

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Problems solved by technology

Obviously, the function of the traditional thin film transistor is too single to meet this need.

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