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Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp

A technology of radio frequency power supply and silicon-based thin film, which is applied in the field of solar cells, can solve the problems of inconvenient production automation and low work efficiency, and achieve the effect of convenient operation, simple structure and guaranteed accuracy

Active Publication Date: 2013-02-06
SHEN ZHEN TRONY SCI & TECH DEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, there are manual or automatic connections, where the manual connection is to manually insert the cathode plate interface into the corresponding RF power interface after the deposition fixture is pushed into the fixed position of the vacuum chamber, and lock the inner thread of the interface lock nut with the interface The external thread of the bolt is tightened, and the interface lock nut simultaneously drives the tensioning sleeve to connect the cathode plate interface cable to the RF power interface. For the connection mechanism that deposits multiple sheets at a time, each interface needs to be connected manually, which is low in work efficiency. Not easy to realize production automation

Method used

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  • Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp
  • Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp
  • Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The connecting member for the radio frequency power supply in the amorphous silicon thin film battery deposition fixture, including the cathode plate interface fixing plate installed on the deposition fixture and the radio frequency power interface fixing plate installed in the vacuum chamber wall, the radio frequency power interface fixing plate is equipped with a spring Mechanism, the spring mechanism is connected with the movable plate with positioning guide sleeve, the positioning guide sleeve is inserted with a guide post to form a guiding and positioning mechanism, the RF power interface and the cathode plate interface are positioned and docked through the guiding and positioning mechanism, and the RF power interface and the interface are adjusted by the spring mechanism. Butt deviation of cathode plate interface.

[0030] See Figure 4 In this embodiment, 16 amorphous silicon battery substrates can be deposited at one time, and four pairs of radio frequency power...

Embodiment 2

[0032] As shown in the figure, the cathode plate interface fixing plate 2 is fixed on the tail of the deposition fixture 1 by welding or bolts, the cathode plate interface 4 is fixed on the cathode plate interface fixing plate 2, and one end of the cathode plate interface cable 3 is connected to the cathode plate interface 4 The other end is connected to the cathode plate, the RF power interface fixed plate 7 is fixed in the cavity wall of the vacuum chamber 5 by welding or bolts, the movable plate 8 is connected with the RF power interface fixed plate 7 through a spring mechanism 11, and the RF power interface 10 is fixed On the movable plate 8 corresponding to the cathode plate interface 4, one end of the radio frequency power interface cable 9 is connected to the radio frequency power interface 10, and the other end is connected to the radio frequency power introduction joint 6, and the guide post 12 is fixed on the cathode plate interface fixed plate 2, The guide sleeve 13 ...

Embodiment 3

[0035] The implementation mode is the same as that of Embodiment 2, and will not be repeated here. See Figure 6 In this embodiment, 48 amorphous silicon battery substrates can be deposited at one time, and 12 pairs of radio frequency power supply interfaces 10 and cathode plate interfaces 4 are required, and 12 cathode plate interfaces 4 and 2 guide posts are installed on the cathode plate interface fixing plate 2 12. Install 12 RF power interfaces 10 and 2 guide sleeves 13 on the movable plate 8. The movable plate 8 and the fixed plate 7 of the RF power interface are connected by 9 spring mechanisms 11, which can ensure the connection between the RF power interface 10 and the cathode plate interface 4. The non-concentric deviation does not exceed half the diameter of the guide post 12 .

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Abstract

The invention relates to a connecting member and method of a radio-frequency power supply for depositing an amorphous silicon film battery, belonging to the technical field of solar batteries. An interface fixing plate of a radio-frequency power supply interface is provided with a spring mechanism; the spring mechanism is connected with a movable plate with a positioning guide sleeve; a guide post is inserted into the positioning guide sleeve to form a guide positioning mechanism; the radio-frequency power supply interface is in butt joint with a negative plate interface in a positioning way through the guide positioning mechanism; and the spring mechanism is used for adjusting the butt joint deviation between the radio-frequency power supply interface and the negative plate interface. By adopting the connecting member, accurate positioning of the negative plate interface and the radio-frequency power supply interface can be realized, the butt joint between the negative plate interface and the radio-frequency power supply interface can be realized rapidly and stably, the joint butt deviation between the negative plate interface and the radio-frequency power supply interface can be adjusted by adjusting a deviation component, and the butt joint accuracy is further ensured.

Description

technical field [0001] The invention relates to a radio frequency power supply connection component and method for depositing amorphous silicon thin film batteries, belonging to the technical field of solar batteries. Background technique [0002] In the production process of amorphous silicon thin film solar cells, when depositing the amorphous silicon layer, it is necessary to add a radio frequency power supply to the cathode plate, under the action of the radio frequency power supply, plasma is formed in the vacuum chamber, uniform discharge is performed, and low temperature deposition is realized, such as patent number 200820152147.2 "Double-Cavity Alternating Amorphous Silicon Photovoltaic Thin Film Chemical Vapor Deposition Fixture" and Patent No. 200610074522.1 "Chemical Vapor Deposition Fixture" disclose the chemical vapor deposition fixture. The cathode plate is installed on the deposition fixture, and the deposition fixture can be moved to facilitate the placement o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01R13/631H01R13/518H01R43/00C23C16/44
Inventor 李毅施泽涛
Owner SHEN ZHEN TRONY SCI & TECH DEV CO LTD