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Temperature compensation method of Hall switch based on CMOS (complementary metal oxide semiconductor) technology and circuit thereof

A technology of temperature compensation circuit and Hall switch, which is applied in the direction of electronic switches, electrical components, pulse technology, etc., can solve the problems that the second-order effect is difficult to control, does not consider the change of temperature, increases the complexity of circuits and processes, and avoids The effect of a narrow operating temperature range

Inactive Publication Date: 2011-09-14
SHANGHAI ORIENT CHIP TECH CO LTD
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Problems solved by technology

This method is not only difficult to control the second-order effect, but also does not consider the variation of other parameters (such as Hall voltage magnification, hysteresis comparator threshold) with temperature. make

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  • Temperature compensation method of Hall switch based on CMOS (complementary metal oxide semiconductor) technology and circuit thereof
  • Temperature compensation method of Hall switch based on CMOS (complementary metal oxide semiconductor) technology and circuit thereof
  • Temperature compensation method of Hall switch based on CMOS (complementary metal oxide semiconductor) technology and circuit thereof

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with accompanying drawing:

[0023] figure 2 An embodiment of the Hall switch temperature compensation method of the present invention is given, consisting of a voltage regulator 201, a Hall sheet 202, a voltage bias 207, a Hall voltage amplifier 203, a signal processing unit 208, a hysteresis comparator 204, and an output lock Storage 205 and clock signal and logic control 206.

[0024] Voltage regulator 201 provides stable voltage and current bias for other currents, voltage bias 207 provides bias voltage for signal processing unit 208 and hysteresis comparator 204, Hall sheet 202 induces magnetic signals and converts them into voltage signals, The voltage amplifier 203 amplifies the collected Hall voltage signal, the amplified differential voltage signal is converted into a single-ended voltage by the signal processing unit 208, and the offset voltage is eliminated, and the processed voltage signa...

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Abstract

The invention relates to a temperature compensation method of a Hall switch based on a CMOS (complementary metal oxide semiconductor) technology and a circuit thereof. The method comprises the following steps: carrying out voltage stabilization and voltage offset on a power supply; and converting Hall voltage signals into single-terminal voltages and eliminating offset voltages as well as comparing processed voltage signals with a set threshold voltage in hysteresis, wherein temperature coefficients of the set threshold voltage are same as temperature coefficients of Hall mobility of a Hall chip. By using the method, temperature coefficients of a threshold voltage of a hysteresis comparator are same as temperature coefficients of electron mobility of a material which is used by the Hall chip, so that the temperature coefficients of the Hall mobility can be offset, thus the Hall switch can work in the temperature range of -40 to 150 DEG C. Compared with the prior art, based on the CMOS technology, fewer components are used in the method, thus the Hall switch can work normally in the wider temperature range.

Description

technical field [0001] The invention relates to a Hall switch circuit, in particular to a CMOS technology-based Hall switch temperature compensation method and a circuit thereof. Background technique [0002] Hall effect is a kind of magnetoelectric effect. This phenomenon was discovered by American physicist Hall (A.H.Hall, 1855-1938) in 1879 when he was studying the conductive mechanism of metals. When the current passes through the conductor perpendicular to the external magnetic field, a potential difference will appear between the two end faces of the conductor perpendicular to the magnetic field and the direction of the current. This phenomenon is the Hall effect, and this potential difference is also called the Hall voltage V H , whose size is: [0003] V H = B μ H I ρ t δ ( L W ...

Claims

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Application Information

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IPC IPC(8): H03K17/90H03K17/14
Inventor 张良罗杰罗立权刘心泽
Owner SHANGHAI ORIENT CHIP TECH CO LTD
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