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Silicon carbide single crystal and silicon carbide single crystal wafer

一种碳化硅单晶、晶片的技术，应用在单晶生长、单晶生长、化学仪器和方法等方向，能够解决热应力界面大等问题，达到晶体缺陷少、晶片品质良好、高性能的效果

Inactive Publication Date: 2011-09-14
NIPPON STEEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The cause of crystal defects at the initial stage of growth is not completely clear at this stage, but it is believed that one of the reasons is that the thermal stress inevitably generated in the modified Lely method is relatively large at the interface between the seed crystal and the growing crystal

Method used

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  • Silicon carbide single crystal and silicon carbide single crystal wafer
  • Silicon carbide single crystal and silicon carbide single crystal wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] First, a SiC single crystal ingot for a seed crystal for crystal growth of Example 1 was produced.

[0063] The nitrogen concentration in the growing crystal is 2.2×10 in the area above 1 mm from the interface with the seed crystal 19 cm -3 Under the conditions of , a SiC single crystal ingot with a diameter of 79 mm was produced by the growth process using the above-mentioned single crystal growth apparatus. In order to make the nitrogen concentration of the growing crystal a desired value, the nitrogen partial pressure in the atmosphere from the estimated time when the growing crystal reached 1 mm to the end of the growth was controlled at 100 Pa, and the nitrogen partial pressure at the start of the growth was set to take into account the nitrogen content of the seed crystal. Concentration etc. values. Next, the seed crystal obtained in this way was machined with a SiC single crystal ingot to produce a plurality of wafers with a diameter of 77 mm in which the {0001...

Embodiment 2

[0070] In order to make the seed crystal for crystal growth of Example 2 by the growth process using the above-mentioned single crystal growth apparatus, the nitrogen concentration in the grown crystal was 5.1×10 in the region of 2 mm or more from the interface with the seed crystal. 19 cm -3 SiC single crystal ingot with a diameter of 103mm. In this case, the nitrogen partial pressure was controlled at 230 Pa except at the beginning of the growth. This ingot was machined to produce a plurality of 101 mm diameter {0001} plane 8° offset wafers, both sides were ground, and one wafer was observed for etch pits. The densities of etch pits corresponding to threading dislocations and basal dislocations are 6.8×10 3 cm -2 , 1.8×10 3 cm -2 , the total density of the pits caused by various dislocations is 8.6×10 3 cm -2 , the density of pits due to microtubules is 1.1 cm -2 .

[0071] Using one of the remaining wafers as a seed crystal, the SiC single crystal of Example 2 was ...

Embodiment 3

[0078] In the same manner as in Example 1, a SiC single crystal ingot with a diameter of 79 mm was produced and used as a seed crystal. Except at the beginning of growth, the nitrogen partial pressure was controlled at 1 kPa, so that the nitrogen concentration of the growing crystal from the region 1 mm away from the seed crystal was 2.0×10 20 cm -3 .

[0079] This ingot was machined to produce a plurality of {0001} plane 8° offset wafers with a diameter of 77 mm, both surfaces were ground, and one wafer was observed for etch pits. The densities of etch pits corresponding to threading dislocations and basal dislocations are 5.6×10 3 cm -2 , 1.1×10 3 cm -2 , the sum of the pits caused by various dislocations has a density of 6.7×10 3 cm -2 , the density of etch pits originating from microtubules is 0.06 cm-2 .

[0080] Using one of the remaining wafers as a seed crystal, the SiC single crystal of Example 3 was grown by the process using the above-mentioned single crysta...

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Abstract

Provided are an high-quality silicon carbide single crystal which has a low density of crystal defects such as dislocation and micropipe and can exert a high yield and high performance when applied to devices; and a silicon carbide single crystal wafer. In the silicon carbide single crystal, the ratio between the dopant element concentration in front of the seed crystal / grown crystal interface in the growth direction and that behind the seed crystal / grown crystal interface in the growth direction is adjusted to 5 or lower and the dopant element concentration of the grown crystal in the neighborhood of the seed crystal is adjusted to 2 1019cm-3 to 6 1020cm-3.

Description

technical field [0001] The present invention relates to a silicon carbide single crystal and a silicon carbide single crystal wafer having few crystal defects such as dislocations and high crystal quality. Background technique [0002] Silicon carbide (SiC) is a wide bandgap semiconductor having a wide band gap of 2.2 to 3.3 eV. In the past, SiC has been researched and developed as an environment-resistant semiconductor material due to its excellent physical and chemical properties, but in recent years, SiC has been used as a short-wavelength optical device from blue to ultraviolet, high-frequency electronic Materials for high-output electronic devices are attracting attention, and research and development are being actively carried out. However, so far, SiC has been difficult to manufacture high-quality large-diameter single crystals, which hinders the practical application of SiC devices. [0003] Conventionally, SiC single crystals of a size capable of producing semicon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36
CPCC30B23/00C30B25/00C30B29/36C30B23/025Y10T428/2918H01L21/02
Inventor 中林正史藤本辰雄胜野正和柘植弘志
Owner NIPPON STEEL CORP
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