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Method for recycling separation blade

A baffle, ion implantation technology, applied in ion implantation plating, coating, electrical components, etc., can solve the problem of low Rs value, can not correctly reflect the safety of ion implanter, etc., to prolong life and save production costs Effect

Active Publication Date: 2013-07-03
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the cumulative dose of the dummy wafer reaches E17 atoms per square centimeter, the Rs value of the control wafer is seriously low to 395 ohms per square centimeter, which cannot correctly reflect the safety of the ion implanter.

Method used

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  • Method for recycling separation blade
  • Method for recycling separation blade
  • Method for recycling separation blade

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Embodiment Construction

[0023] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0024] The core idea of ​​the present invention is: in order to monitor the safety state of the ion implanter, it is necessary to monitor the implant dose of the ion implanter by using a monitoring sheet before the product wafer is exposed to the ion implanter. After the dummy wafer in the monitoring film has been monitored several times, when the cumulative dose reaches E17 atoms per square centimeter, this dummy wafer is injected with the opposite type of element, and the implantation dose is E 17 atoms per square centimeter, which compensates for the impurities in the dummy wafer Concentration, in the case of the same implantation dose as in the previous monitoring state, the Rs value of the control wafer is completely restored, which means that the ...

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Abstract

The invention discloses a method for recycling a separation blade. The separation blade is used for being imbedded into an ion implanter and monitoring the correctness of the implantation dose of the ion implanter. The method comprises the following steps of: injecting a predetermined dose of ion to the separation blade N times, wherein the predetermined dose of ion injected at every time is usedfor monitoring the correctness of the implantation dose of the ion implanter when the ion implanter is used every time, N is a natural number; injecting elements opposite to ions in type into the separation blade when the accumulative dose of ions implanted in the separation blade reaches E17 atoms per square centimeter after injecting the ions N times, wherein the dose of the opposite type of element is E17 atoms per square centimeter. By using the method, the service life of the separation blade is effectively prolonged and the production cost is saved.

Description

technical field [0001] The invention relates to a semiconductor ion implantation process, in particular to a method for recycling blocking sheets. Background technique [0002] At present, in the semiconductor integrated circuit manufacturing process, it is necessary to accurately control the ion implanter (ionimplanter) to perform ion implantation on the product wafer. Before the middle, all use the surveillance film to carry on the monitoring. Among them, the product wafer is a wafer on which devices have been distributed, and can eventually become a finished product through multiple processes; the monitoring chip is a flat wafer silicon wafer that has not been processed. [0003] For high-current ion implantation with an ion beam current greater than 1 milliampere (mA), multiple monitoring chips are required, and the number of monitoring chips used is about 10. Of course, the number of monitoring chips is also adjusted accordingly according to the needs of the specific p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48H01L21/265
Inventor 张进创黄柏喻叶文源王蒙邵明虎
Owner SEMICON MFG INT (SHANGHAI) CORP