Ion implanting system and method

Abstract

The invention discloses an ion implanting system. The system comprises an ion source, a quality-analyzing magnet, a beam scanning device, a collimating device, a speed changing device and a manufacturing process cavity; and the system also comprises a rectilinear accelerator which is arranged between the quality-analyzing magnet and the beam scanning device and is used for accelerating an ion beam within a preset energy range by using a radio-frequency electric field and an energy filtering device which is arranged between the rectilinear accelerator and the beam scanning device and is used for improving the energy monochromaticity of the ion beam within the preset energy range. The invention also discloses an ion implanting method implemented by the ion implanting system. In the high-energy-ion implanting application, the transmission efficiency of the high-energy ion can be improved; and the system can be conveniently modified to be applicable for the implantation of a medium-energy ion beam.

Description

technical field [0001] The invention relates to an ion implantation system, in particular to an ion implantation system and method. Background technique [0002] Ion beam implanters are widely used in the ion doping process of semiconductor wafers. Ion beam implanters generate an ion beam consisting of ions of a desired type and impinge the beam on the surface of a semiconductor wafer workpiece, thereby "doping" or implanting the desired ions into the workpiece surface. [0003] The structure of an ion implanter for performing high-energy ion implantation is as follows figure 1 As shown, referring to the description of US Pat. No. 6,137,112, the high-energy ion implanter can generate an ion beam 14' with a beam energy of 10-5000 keV. Wherein, the implanter includes an ion source 12' for providing ions constituting an ion beam 14', and the ion beam is implanted into a workpiece or transported to a wafer processing chamber 16' through an ion beam transmission path. The impl...

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Problems solved by technology

[0011] The technical problem to be solved by the present invention is to overcome the defects that the transmission efficiency of the existing system for high-energy ions is too low and various ion implantation applications in the prior art cannot be performed by the same system, and provide a method that can perform high-energy ion implantation Improving the transmission efficiency of high-energy ions in certain applications, and can also easily modify the ion implantation system and corresponding ion implantation methods suitable for medium-beam ion implantation applications

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