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Photoresists and methods of use thereof

A photoresist and substrate technology, used in optics, optomechanical equipment, photosensitive material processing, etc.

Active Publication Date: 2015-08-05
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, existing ion implantation methods have significant problems

Method used

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  • Photoresists and methods of use thereof
  • Photoresists and methods of use thereof
  • Photoresists and methods of use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] Embodiment 1: Preparation of resist

[0081] A photoresist was prepared by mixing the following components (1-5 below), where the amounts are expressed in weight percent based on the total weight of the resist.

[0082] 1. Resin. The resin of the photoresist is (2-methyl-2-adamantyl methacrylate) / β-hydroxy-γ-butyrolactone methacrylate / cyano norbornenyl methacrylate The terpolymer accounts for 10. / 80% by weight based on the total weight of the fluid photoresist.

[0083] 2. Photoacid generator compound (PAG). PAG is tert-butylphenyltetramethylenesulfonium perfluorobutanesulfonate, accounting for 2.5% by weight based on the total weight of the fluid photoresist.

[0084] 3. Alkaline additives. The basic additive is N-alkylcaprolactam, which accounts for 0.017% by weight based on the total weight of the photoresist composition.

[0085] 4. Adhesion promoting component. The adhesion promoting component is 3-glycidoxypropyltrimethoxysilane, accounting for 2.5% by weigh...

Embodiment 2

[0087] Embodiment 2: Lithographic printing process

[0088] The resist composition prepared in Example 1 was spin-coated on the surface of the SiON wafer, and gently baked at 90° C. for 60 seconds by a vacuum hot plate. The resist coating was exposed through a photomask at 193 nm, and the exposed coating was post-exposure baked at 110°C. The coated wafer was then treated with 0.26N aqueous tetrabutylammonium hydroxide to develop the patterned resist layer.

[0089] After the photoresist relief image is formed, the substrate (with the resist mask) is exposed to a high energy (>20eV, reduced pressure environment) phosphorous-ion implantation process.

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Abstract

New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

Description

technical field [0001] The present invention relates to novel photoresists comprising Si-containing components and which are particularly useful for ion implantation lithographic applications. The photoresists of the present invention exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride, and other inorganic surfaces. Background technique [0002] Photoresists are light-sensitive films used to transfer images to substrates. A photoresist coating is formed on the substrate, and then the photoresist layer is exposed to an active ray source through a photomask. [0003] Ion implantation techniques have been used to dope semiconductor wafers. With this method, an ion beam implanter generates an ion beam within an evacuated (low pressure) chamber, and the ions are directed and "implanted" into the wafer. [0004] However, existing ion implantation methods have significant problems. Among other issues, in implant lithography protoc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00H01L21/266
CPCG03F7/0397G03F7/40G03F7/0392G03F7/0752H01L21/0273H01L21/0274G03F7/0085
Inventor G·珀勒斯
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC