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InGaN film with small band gap and preparation method thereof

A technology of indium gallium and thin film, applied in the field of thin film solar cells, to achieve the effects of improving efficiency, strong radiation resistance, and reducing recombination

Inactive Publication Date: 2013-04-24
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Theoretically, the conversion efficiency of solar cells based on InN-based materials may be close to the theoretical limit conversion efficiency of solar cells of 72%.

Method used

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  • InGaN film with small band gap and preparation method thereof

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Effect test

Embodiment 1

[0036] 1) Perform surface plasma cleaning on the surface of the 2-inch polished p-Si(100) substrate, the specific method is: in the sample chamber of HHPEMOCVD, the 2-inch polished p-Si(100) substrate is heated in argon and nitrogen The plasma treatment is carried out in a mixed gas atmosphere, the mass flow ratio of argon and nitrogen is 20:4, the filament voltage of the plasma cleaning power supply is 70V, and the acceleration voltage is 110V. This treatment ensures the cleanliness of the sample surface and the reliability of the process, and also enhances the bonding strength between the subsequently deposited film and the substrate, and the pretreatment of the substrate surface with nitrogen is beneficial to the subsequent deposition of In x Ga 1-x The combination of In and N in the N film is beneficial to the injection of In into the film.

[0037] 2) Deposition of In x Ga 1-x N thin film: send the 2-inch polished p-Si (100) substrate after plasma cleaning into the dep...

Embodiment 2

[0040] 1) Perform surface plasma cleaning on the surface of 2-inch sapphire substrate, the specific method is: in the sample chamber of HHPEMOCVD, 2-inch polished p-Si(100) substrate is carried out in a mixed gas atmosphere of argon and nitrogen For plasma treatment, the mass flow ratio of argon and nitrogen is 20:4, the filament voltage of the plasma cleaning power supply is 80V, and the acceleration voltage is 100V. This treatment ensures the cleanliness of the sample surface and the reliability of the process, and also enhances the bonding strength between the subsequently deposited film and the substrate, and the pretreatment of the substrate surface with nitrogen is beneficial to the subsequent deposition of In x Ga 1-x The combination of In and N in the N film is beneficial to the injection of In into the film.

[0041] 2) Deposition of In x Ga 1-x N thin film: send the 2-inch sapphire substrate after plasma cleaning into the deposition chamber of HHPEMOCVD, the In so...

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Abstract

An InGaN film with a small band gap with the chemical formula InxGa1-xN, wherein x is between 0.3 and 0.8, consists of a substrate and a layer of InGaN film formed on the surface of the substrate, and the thickness of the InGaN film is 0.2-0.6 mu m. The preparation method comprises the following steps: plasma cleaning the surface of the substrate in a sample chamber of MOCVD deposition system, then depositing a layer of InGaN film on the surface of the substrate by using magnetron sputtering technique in a deposition chamber of MOCVD deposition system. The InGaN film with small band gap can provide an almost perfect match band gap corresponding to solar spectrum, offering the possibility of designing and preparing high efficiency multijunction solar cell by using single semi conducting material, with the advantages of high absorption coefficient, high carrier mobility and high resistance to radiation. The preparation method is easy to operate and favorable to the large-scale application.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to an indium gallium nitride thin film with a small band gap and a preparation method thereof. Background technique [0002] Group III nitrides BN, AlN, GaN, InN(Ⅲ-N), etc. and their multi-element alloy compounds are new semiconductor materials (direct band gap semiconductor materials) with superior performance. They are used in solar cells, surface acoustic wave devices, optoelectronic devices, photoelectric Integration, high-speed and high-frequency electronic devices have been important applications, and have very broad application prospects. [0003] With the research and development of InN in recent years (especially the bandgap of InN), the theoretical and experimental foundations have been laid for the design and preparation of new high-efficiency solar cells: before 2002, the bandgap of InN was considered to be ~1.9eV , After 2002 (including 2002), there has b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34C23C16/44C23C14/06C23C14/35
Inventor 薛玉明宋殿友朱亚东王金飞周凯李石亮汪子涵裴涛王一牛伟凯蓝英杰
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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