Horizontal multi-stage thermal parallel thermoelectric conversion pile

Abstract

The invention discloses a horizontal multi-stage thermal parallel thermoelectric conversion pile, which comprises a plurality of thermoelectric conversion units and heat-conducting electric insulating layers, wherein each thermoelectric conversion unit consists of an N-type thermoelectric semiconductor, a P-type thermoelectric semiconductor and a metal sheet; the heat-conducting electric insulating layers are positioned between adjacent thermoelectric conversion units; and the working ends of every two adjacent thermoelectric conversion units are overlapped and connected with each other through one heat-conducting electric insulating layer. During refrigerating, the thermoelectric conversion pile can obtain higher refrigerating efficiency while producing high refrigerating amount; and moreover, hot reflux can be reduced by using the thermoelectric semiconductors with flaky structures. During power generation, thermoelectric conversion can be performed to the maximum extent by using accumulated different-temperature galvanic piles stacked on the same pole under the condition of limited heat exchange surface. Meanwhile, the hot outflow of the thermoelectric semiconductors with flaky structures is smaller, and more electric energy can be generated under the condition of the same temperature difference compared with the conventional thermoelectric pile.

Description

technical field [0001] The invention relates to a device for cooling or generating electricity by using a thermoelectric semiconductor material, in particular to a horizontal multi-stage thermal parallel thermoelectric conversion stack. Background technique [0002] As we all know, for a pair of thermocouples composed of N-type thermoelectric semiconductor materials and P-type thermoelectric semiconductor materials, when the thermocouples are connected with direct current, due to the different directions of the direct currents, heat will be absorbed or released on the contact surface of the couples. This phenomenon is called the Peltier effect. If the N-type thermoelectric semiconductor material and the P-type thermoelectric semiconductor material are alternately connected together, heat absorption will be generated on a galvanic contact surface to form a working end (the working end is called cold when using the Peltier effect for refrigeration). End), heat release is gene...

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In power generation applications, vertical structures have another drawback

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