Semiconductor substrate and methods for the production thereof
A semiconductor and substrate technology, applied in the field of semiconductor substrates, can solve the problems of reducing mechanical strength and achieve the effect of reducing mechanical strain and improving mechanical strength
Active Publication Date: 2011-11-02
KONINK PHILIPS ELECTRONICS NV
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Problems solved by technology
This also has a detrimental effect on handling with vacuum manipulators
[0011] The mechanical strength is reduced by the different spacing dimensions of the recesses etched into the semiconductor substrate from the front side and from the rear side, the use in particular with practically large forces and accelerations is very limited
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[0043] figure 1 A silicon semiconductor 1 is shown in a schematic manner with recesses formed in the silicon semiconductor 1 in the form of blind holes and subsequently openings 2 and 3 after thinning of the silicon semiconductor substrate 1 , which will be described more precisely below.
[0044] figure 2 An example of forming a conductive connection through a silicon semiconductor substrate 1 and an insulator 2 is shown in a schematic manner. In this respect, a recess having a depth of at least 200 μm is formed from the front side of the semiconductor substrate 1 by a plasma etching process using a correspondingly formed mask. After the recess is formed, a silicon oxide layer is first formed on the front surface and the inner wall of the recess through a thermal oxidation process, and then the recess is completely filled with doped polysilicon.
[0045] Subsequently, the doped polysilicon present in the inwardly arranged recess is exposed at the upper end face, so that an...
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The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and / or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.
Description
[0001] This application is a divisional application. The original application is the international patent application PCT / DE2006 / 001450 which entered the Chinese national phase on February 3, 2008, and the international filing date is August 10, 2006. The Chinese national application number of the original application It is 200680028727.4, and the title of the invention is "semiconductor substrate and its manufacturing method". technical field [0002] The present invention relates to semiconductor substrates and methods of manufacturing such semiconductor substrates. They can be used in various applications where miniaturized designs are possible. Optical detectors, such as photodiodes, for example, can thus be arranged on the semiconductor substrate according to the invention and contacted in conductive form, so that their respective measurement signals are supplied to the electronic evaluation means and imaging of the detected image signals is also possible. In particular,...
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IPC IPC(8): H01L23/538H01L21/768
CPCH01L21/76898H01L2924/0002H01L2223/6622H01L27/14636H01L23/481H01L31/02005H01L2924/00012H01L2924/00
Inventor 克里斯蒂安·德拉贝亚历山大·沃尔特罗格·斯特德曼安德烈亚斯·贝格曼格雷翁·沃格特迈尔拉尔夫·多沙伊德
Owner KONINK PHILIPS ELECTRONICS NV