Method for predicting service life of hot carrier of silicon on insulator (SOI) device

A silicon-on-insulator and hot-carrier technology, which is applied to the testing of a single semiconductor device, can solve the problems of inaccurate, different, and no self-heating effects of hot-carrier life, and achieve the elimination of self-heating effects, accurate prediction, Predict accurate results

Active Publication Date: 2011-11-09
锐立平芯微电子(广州)有限责任公司
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Problems solved by technology

For SOI devices, due to the existence of self-heating effect, the actual temperature of the device will rise during accelerated stress experiments, but in actual circuit applications, due to the high frequency, there is basically no self-heating effect
Therefore, if the accelerated stress experimental data at room temperature is used to predict the hot carrier lifetime at room temperature, it is not accurate, and there may even be a big difference

Method used

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  • Method for predicting service life of hot carrier of silicon on insulator (SOI) device
  • Method for predicting service life of hot carrier of silicon on insulator (SOI) device
  • Method for predicting service life of hot carrier of silicon on insulator (SOI) device

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Embodiment

[0031] Firstly, the thermal resistance of SOI NMOS with a width-to-length ratio of 10 / 0.35 is extracted by using the source-body PN junction diode current as a temperature sensor, and its value is 0.0344m℃ / W. Then after testing at 25°C and 100°C, the stress condition is leakage voltage V d =3.9V, gate voltage V g = Drain current at 1.65V (the stress condition is determined by the maximum substrate current method), and calculate the device power, and then calculate the actual temperature of the device according to the thermal resistance to be 56°C and 128°C respectively.

[0032] Then select three 10 / 0.35 NMOS for accelerated stress experiment, the stress condition is V d =3.9V, V g =1.65V, the time is 5000s, and the ambient temperature is 25°C and 100°C. Then use the substrate / drain current ratio model to predict the lifetime. The hot carrier lifetime of the device at an ambient temperature of 25°C and 100°C is 0.3 years and 0.47 years, respectively, that is to say, the dev...

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Abstract

The invention discloses a method for predicting the service life of a hot carrier of a silicon on insulator (SOI) device. The method comprises the following steps: 1, extracting the thermal resistance of the silicon on insulator device; 2, testing drain current of the silicon on insulator device under a stress condition, calculating the power of the silicon on insulator device under the stress condition, and calculating the actual temperature of the silicon on insulator device by utilizing the extracted thermal resistance; 3, performing an accelerated stress test on the silicon on insulator device; and 4, predicting the service life of the hot carrier of the silicon on insulator device. By utilizing the method, accurate prediction on the service life of the hot carrier on the silicon on insulator device is realized.

Description

technical field [0001] The invention relates to the technical field of reliability of integrated circuits, in particular to a method for predicting the hot carrier lifetime of a silicon-on-insulator (SOI) device. The so-called device hot carrier lifetime is the drain current I dsat The time it takes to degenerate by 10%. Background technique [0002] The hot carrier damage of MOSFET is caused by the rapid reduction of MOS device size in recent years and the relatively stable working voltage, which makes the electric field intensity and lateral electric field of the gate oxide layer of the MOS device in the working state increasing. Hot carrier damage has become one of the key factors affecting the reliability of MOS devices. As the feature size of the device decreases, the lateral electric field increases. When the device works in the saturation region, the electrons in the high field region obtain higher energy and become high-energy electrons. When the energy of the elect...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 卜建辉毕津顺习林茂韩郑生
Owner 锐立平芯微电子(广州)有限责任公司
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