Chamber shield for vacuum physical vapor deposition

Abstract

A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber and includes an annular body and a plurality of concentric annular projections extending from the annular body.

Description

technical field

[0001] The present disclosure relates generally to radio frequency (RF) sputtering physical vapor deposition (PVD), and more particularly to forming shields and chamber shields for RF sputtering PVD apparatus. Background technique

[0002] Radio frequency sputtering PVD is a method used to deposit thin films on substrates. The substrate is placed in the vacuum chamber facing the target connected to an RF power source. When RF power is applied, a plasma is formed. Positive gas ions are pulled toward the target surface, impact the target volume, and remove target atoms through momentum transfer. The removed target atoms are then deposited on the substrate to form a thin film layer.

[0003] During physical vapor deposition, it is important to control the properties of the deposited film. Due to the plasma spreading towards the chamber wall or deposition against it, problems arise with regard to the stability of the process or the film. Contents of the inv...

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