The invention belongs to the technical field of
nanostructure manufacturing, and discloses a
metal nanoarray structure prepared on
graphene in an in-situ controllable mode and a preparation method thereof.The preparation method comprises the steps that a
silicon wafer serves as a substrate, and a
graphene layer is prepared on the
silicon substrate through a mechanical stripping method; a
silicon cantilever beam containing
raw material molecules is installed on an atomic force
microscope to scan the prepared substrate, a high-resolution surface
topography image is generated, and after a flat position without obvious defects is selected according to the
topography image, the tip of the
silicon cantilever beam makes contact with the
graphene or the surface of the silicon substrate; and then positive
voltage is applied to the tip, the
retention time and the load are adjusted, so that the
metal nanometer material is deposited near the tip, and a
metal nanometer array structure is formed. By means of the method, in-situ controllable manufacturing of the size, the morphology, the composition, the structure and the position of the metal particles on the surface of the graphene can be achieved. Therefore, the material can be better popularized and applied in the technical fields of
electronics,
optics,
catalysis, sensing, field emission, display devices and the like.