4results about How to "Deposition stability" patented technology

This invention provides a method for metal interconnection of flexible circuits, comprising the following steps: coating a first dielectric layer; depositing a first metal layer and photolithographically etching a first metal pattern; coating a second dielectric layer and photolithographically etching interlayer vias; depositing a second metal layer and photolithographically etching a second metal pattern, wherein the second metal pattern overlaps with the first metal pattern; coating a third dielectric layer and photolithographically etching contact windows; and fabricating metal contacts. The beneficial effects of this invention are that the overlapping of the upper and lower metal layer patterns improves the reliability of vertical interconnection between metal layers, reduces lateral etching, improves etching accuracy, effectively avoids open circuits in flexible circuits, enhances the interconnection quality of flexible circuits, improves the fracture resistance of fine lines in flexible circuits, facilitates high-density wiring in flexible circuits, constructs thick electrical contact points, reduces contact resistance, improves signal transmission quality, and enhances the mechanical strength and wear resistance of the contacts.

The invention provides a preparation method of a silicon nitride waveguide, and relates to the technical field of semiconductors. The preparation method comprises the following steps: depositing a silicon oxide layer on the surface of a substrate; depositing a monocrystalline silicon layer with a preset thickness on the surface of the silicon oxide layer, wherein the preset thickness is any value in the range; photoresist coating, developing treatment and etching treatment are sequentially carried out on the monocrystalline silicon layer, so that the monocrystalline silicon layer with a preset horizontal distance is reserved on the surface of the silicon oxide layer from the edge to the center, and the preset horizontal distance is any one value ranging from 4 micrometers to 6 micrometers; and depositing a silicon nitride layer on the surfaces of the monocrystalline silicon layer and the silicon oxide layer, and sequentially carrying out developing treatment and etching treatment to prepare the silicon nitride waveguide. The stress matching degree between the silicon nitride layer and the silicon oxide layer in the silicon nitride waveguide is improved, the risk of stripping of the silicon nitride layer is reduced, and the product yield is improved.

The application discloses a lithium battery charging control method, which comprises the following steps: obtaining the battery health degree of a lithium battery pack when the lithium battery pack is in a battery recharging state during the driving of a target electric vehicle, the lithium battery pack being arranged in the target electric vehicle; obtaining the current cell temperature of the lithium battery pack when the battery health degree is less than a set health degree; recharging the lithium battery pack by using a pulse charging mode when the current cell temperature is detected to be within a preset temperature range; and controlling the charging parameter in the recharging process by using the pulse charging mode to be a target charging parameter according to the battery health degree. The lithium battery charging control method, electronic equipment and storage medium disclosed by the application can effectively reduce lithium dendrites in the lithium battery, thereby improving the charging and discharging performance and service life of the lithium battery.

The utility model relates to the technical field of industrial environmental protection, in particular to a wet-type limestone / lime-gypsum method two-stage circulation desulfurization device which comprises a desulfurization tower and further comprises a liquid accumulation disc arranged in the desulfurization tower and used for dividing the desulfurization tower into a lower circulation desulfurization area and an upper circulation desulfurization area. The pH value in the lower circulating desulfurization area is 4.0-5.0, the pH value in the upper circulating desulfurization area is 5.5-6.0, and a lower slurry spraying layer is arranged in the lower circulating desulfurization area. According to the utility model, a relatively independent double-circulation desulfurization system is formed in one desulfurization tower, and the desulfurization of flue gas is jointly completed by the double-circulation desulfurization system. And a single-tower double-region desulfurization system solves the problems that the pH values of slurry required by absorption and oxidation are different, the pH value of slurry for absorbing acid gases such as SO2 is higher and is about 5.5, and the pH value of an oxidation crystallization region is required to be lower than 5.0, so that the effects of improving the desulfurization rate and improving the utilization rate of an absorbent are achieved by using the double-region method.