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35results about How to "Ensuring sufficient uniformity" patented technology

Silica container and method for producing the same

The present invention is a method for producing a silica container having a substrate containing gaseous bubbles in its outer peripheral part and an inner layer comprised of a transparent silica glass formed on an inner surface of the substrate, wherein a powdered raw material for forming a substrate containing Li, Na, and K with the total concentration of 50 or less ppm by weight and a powdered raw material for forming an inner layer containing Ca, Sr, and Ba with the total concentration of 50 to 2000 ppm by weight are prepared; a preliminarily molded substrate is formed in a frame; a preliminarily molded inner layer is formed on an inner surface of the preliminarily molded substrate; and the preliminarily molded substrate and molded inner layer are heated from inside thereof by a discharge-heat melting method under a gas atmosphere containing a hydrogen gas or a helium gas or a gas mixture thereof with the ratio of more than 10% by volume thereby making an outer peripheral part of the preliminarily molded substrate to a sintered body and an inner peripheral part of the preliminarily molded substrate and the preliminarily molded inner layer to a fused glass body. With this, a method for producing a silica container, producible with a low cost and having a high durability and dimensional precision, and a container of this sort can be provided.
Owner:SHIN ETABU QUARTZ PRODS

Oxide film forming method

To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed. The pretreatment process is preferably performed at a temperature lower than the temperature for the oxide-film-formation process and also preferably performed under depressurized conditions, the level of the depressurization being higher than the level for the oxide-film-formation process. A high-quality gate-insulating film for a transistor chip can be formed according to this method for the formation of oxide films.
Owner:TOKYO ELECTRON LTD
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