P-N junction diode structure of MOS (metal-oxide semiconductor)

Abstract

The invention provides a P-N junction diode structure of an MOS (metal-oxide semiconductor), at least comprising a substrate, a channel structure which is formed above the substrate, a grid electrode structure which is formed in the channel structure and extrudes out of the surface of the channel structure, a side wall structure which extrudes out of the surface of the channel structure and is arranged at one side of the grid electrode structure, a metal layer which is formed on the surface of the channel structure, the surface of the grid electrode structure and the side wall structure, and an ion implantation area of single conductive materials, the ion implantation area is formed on the substrate in a form of multiple regions with different depths and adjacent to the grid electrode structure as well as forms an ohm junction with the metal layer. A diode component has quick response, a positive conduction pressure drop value is low and a back bias voltage leakage current is small.

Description

[0001] The present invention is a divisional application. The filing date of the original application is: April 2, 2009; the original application number is: 200910132565.4; the original invention creation name is: metal oxide semiconductor P-N junction diode structure and its manufacturing method. technical field [0002] The invention relates to a metal oxide semiconductor P-N junction diode structure and a manufacturing method thereof, in particular to a diode with lower leakage current and lower forward conduction voltage drop (V F ), a metal oxide semiconductor P-N junction diode structure with high reverse withstand voltage value and low reverse recovery time characteristics. Background technique [0003] Schottky diode is a unipolar element with electrons as carriers, and its characteristics are fast speed and forward conduction voltage drop value (V F ) is low, but the reverse bias leakage current is relatively large (related to the Schottky barrier value caused by th...

AI Technical Summary

Problems solved by technology

In fact, it is composed of two 300-volt trench Schottky diodes in series, and the forward conduction voltage drop value of the component (V F ) is also higher

How to design components to achieve higher reverse withstand voltage (such as above 600 volts), lower forward conduction voltage drop (V F ), lower reverse leakage current and lower reverse recovery time (Reverse Recovery Time; tRR), that is to say, it has a faster response speed, which is really a big challenge

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