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Analog buffer circuit

A technology for buffering circuits and conductive layers, applied in circuits, electrical components, electrical solid-state devices, etc., can solve the problems of damaging the stability of thin film transistors and reducing saturation current

Active Publication Date: 2011-11-30
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, the narrowing of the channel width and length of thin film transistors will reduce the saturation current and impair the stability of thin film transistors.

Method used

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Embodiment Construction

[0072] The term "gate driver on array" or "GOA" for short used in the present invention mainly refers to the use of amorphous silicon (a-Si) thin film transistors and (or) low temperature polysilicon (LTPS) The thin film transistor is used to make the circuit layout or structure of the shift register and (or) gate driver on the glass substrate of the display panel.

[0073] Please refer to figure 1 and figure 2 , which is an analog buffer circuit 100 according to an embodiment of the present invention. The analog buffer circuit 100 includes a p-channel thin film transistor (PTFT) 110 and an n-channel thin film transistor (NTFT) 120 electrically coupled to each other.

[0074] The p-type channel thin film transistor 110 has a source region 111 and a drain region 113 defining a channel region 112 therebetween, and the p-type channel thin film transistor 110 is formed on the substrate 101 . The aforementioned n-type channel thin film transistor 120 has a source region 121 an...

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PUM

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Abstract

The invention discloses a simulated buffer circuit, comprising p type and n type channel thin film transistors. The p type and n type channel thin film transistors both comprise source electrode zones, drain electrode zones, grid electrode zones, source electrodes and commonly used drain electrodes, wherein a channel zone is defined between the source electrode zones and the drain electrode zones, the drain electrode zones of the p type channel thin film transistors and that of the n type channel thin film transistors are mutually contacted, a grid electrode layer is formed on the corresponding channel zone and is insulating to the corresponding channel zone, the source electrodes are insulating to the grid electrode layer, the source electrodes and the grid electrode layer are electrically connected to corresponding source electrode zones, the commonly used drain electrodes, the grid electrode layer and the source electrodes are insulating and isolated, and the commonly used drain electrodes, the grid electrode layer and the source electrodes are electrically connected with the drain electrode zones of the p type and n type channel thin film transistors via through holes arrangedon a depletion zone.

Description

technical field [0001] The present invention relates to an analog snubber circuit, and more particularly to an analog snubber circuit using a common electrode. Background technique [0002] A display panel generally has a substrate and a plurality of pixel elements formed thereon. These pixel elements are basically arranged in a matrix, and the columns of the matrix have gate lines, and the rows of the matrix have data lines. The display panel is driven by a driving circuit including a gate driver and a data driver. The gate driver generates a plurality of gate signals (scanning signals) to act on the gate lines sequentially to turn on the pixel elements column by column. The data driver generates a plurality of source signals (data signals), that is, sequentially sampled image signals, and these signals are transmitted to the data line at the same time, and cooperate with the gate signals to display images on the panel. [0003] In this driving circuit, a multi-stage shi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02G09G3/20
CPCH01L27/1214H01L27/12H01L27/124H01L29/41733
Inventor 陈沛桦丁友信傅春霖卢朝文林男颖徐伟钧
Owner AU OPTRONICS CORP