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Formation method of sonos structure and sonos memory

A patterned, substrate technology, applied in the formation of SONOS memory, the formation of SONOS structure, can solve the problems of erasure saturation, trapping charge layer holes can not be completely tunneled, etc., to achieve the effect of erasing saturation

Active Publication Date: 2011-12-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Description
  • Claims
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Problems solved by technology

[0006] The SONOS memory of the prior art described above has the problem of erase saturation, that is, the holes in the trapping charge layer cannot completely tunnel out of the trapping charge layer

Method used

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  • Formation method of sonos structure and sonos memory
  • Formation method of sonos structure and sonos memory

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Embodiment Construction

[0032] Based on the working principle of the SONOS memory described above, the SONOS memory uses the FN tunneling effect (Fowler-Nordheim Tunneling) for erasing: a strong field between the gate and the substrate makes the electrons in the trapped charge layer tunnel through the tunnel When the thickness of the tunneling dielectric layer is determined, the tunneling process is mainly determined by the electric field in the tunneling dielectric layer. The greater the electric field strength, the easier tunneling occurs, that is, the The easier it is for electrons to tunnel into the substrate. There are two tunneling processes in the SONOS structure: tunneling one, electrons tunnel from the gate through the top dielectric layer to the trapping charge layer, and tunneling two: electrons tunnel from the trapping charge layer through the tunneling dielectric layer to the substrate. In the traditional planar SONOS structure, the number of electrons in the trapped charge layer is larg...

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Abstract

A method for forming a SONOS structure and a SONOS memory, the method for forming the SONOS structure includes: providing a substrate; forming a patterned mask layer on the substrate to define a region of the ONO structure; The region of the ONO structure on the substrate grows the same substrate as the substrate material, and the surface of the substrate is convex; the patterned mask layer is removed; a tunnel dielectric layer is sequentially formed on the substrate , the charge trapping layer, the top dielectric layer and the conductive layer, the upper surfaces of the tunneling dielectric layer, the charge trapping layer, the top dielectric layer and the conductive layer are convex; the substrate is ion-doped, and in the substrate, A source and a drain are formed on both sides of the substrate. The structure formed by the method can solve the problem of SONOS memory erase saturation in the prior art.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a SONOS structure and a method for forming a SONOS memory. Background technique [0002] Generally, semiconductor memories used to store data are classified into volatile memories and nonvolatile memories, volatile memories are prone to lose their data when power is interrupted, and nonvolatile memories can retain their data even when power is interrupted data. Non-volatile semiconductor memory is relatively small compared to other non-volatile storage technologies (eg, disk drives). Therefore, nonvolatile memories have been widely used in mobile communication systems, memory cards, and the like. [0003] The non-volatile memory cell can be realized by one of two major technologies of a floating gate structure or a SONOS (Silicon-Oxide-Nitride-Oxide-Silicon, SONOS for short) structure. The relatively thick (70-120 angstrom) tunnel oxide layer of the...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/8247
Inventor 黄锦才吴小利
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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