Unlock instant, AI-driven research and patent intelligence for your innovation.

Solid-state imaging device, manufacturing method thereof, and imaging device

A camera device, solid-state technology, applied in the field of camera devices, can solve problems such as inability to meet requirements, and achieve the effect of improving sensitivity

Inactive Publication Date: 2011-12-14
SONY CORP
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0027] However, with the further development of the miniaturization of the pixel, only setting the charge storage sub-region is not enough to meet the requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state imaging device, manufacturing method thereof, and imaging device
  • Solid-state imaging device, manufacturing method thereof, and imaging device
  • Solid-state imaging device, manufacturing method thereof, and imaging device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0054] 1. First embodiment (solid-state imaging device)

[0055] 2. Second embodiment (imaging device)

[0056] 1. The first embodiment

[0057] Figure 1A with 1B A schematic configuration diagram (cross-sectional view) showing the solid-state imaging device according to the first embodiment of the present invention. Figure 1A Shows the cross-sectional view at the orthogonal plane of the transfer gate, Figure 1B Means Figure 1A Sectional view at the line A-A' in the middle.

[0058] The solid-state imaging device has the following structure: - A photodiode (PD) of a sensor unit, a charge transfer unit as a transfer gate 7 and a floating diffusion (FD) 6 are formed on the surface of the type semiconductor substrate 1.

[0059] A semiconductor substrate (a silicon substrate or the like) or a semiconductor substrate and a semiconductor epitaxial layer formed on the semiconductor substrate can be used as the semiconductor substrate 1.

[0060] The p-type semiconductor well region 2 is f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a solid-state imaging device, a manufacturing method thereof, and an imaging device provided with the solid-state imaging device. A pixel of the solid-state imaging device has a sensor unit capable of photoelectric conversion, and the solid-state imaging device includes: a charge storage region of a first conductivity type formed in the semiconductor substrate and constituting the sensor unit; A multilayer charge storage subregion made of the impurity region of the first conductivity type is formed in the semiconductor substrate under the charge storage region serving as a main charge storage region, wherein the multilayer charge at least one layer of charge storage subregions among the storage subregions is formed over the entirety of the pixels; and a device isolation region is formed in the semiconductor substrate, the device isolation region isolates the pixels from each other, and is formed by the first Impurity regions of two conductivity types are made. The solid-state imaging device can ensure sensitivity while miniaturizing pixels.

Description

[0001] Cross reference of related applications [0002] This application contains the subject matter related to the disclosure of Japanese prior patent application JP 2010-135612 filed with the Japan Patent Office on June 14, 2010, and the entire content of the prior application is incorporated herein by reference. Technical field [0003] The present invention relates to a solid-state imaging device, a manufacturing method thereof, and an imaging apparatus provided with the solid-state imaging device. Background technique [0004] In a solid-state imaging device, in order to compensate for the decrease in the charge storage capacity due to the miniaturization of pixels, it is proposed to additionally form an impurity region of the same conductivity type as the charge storage region under the charge storage region in the existing sensor unit . [0005] In addition, a charge storage unit is also proposed, in which ions of different energies are implanted multiple times under the charg...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/146H04N5/225
CPCH01L27/1463H01L27/14656H01L27/14643H01L27/14689H01L27/148
Inventor 久保典弘石渡宏明河相勲
Owner SONY CORP