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Light emitting diode structure and manufacturing method thereof

A technology of light-emitting diodes and epitaxial structures, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of limited light extraction efficiency, increased chip technology and cost, etc., and achieves simple and easy control of the manufacturing process, reduced production costs, and reflectivity. The effect of increased reflectance spectrum width

Inactive Publication Date: 2011-12-14
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology

Although this kind of double reflective layer can also effectively improve the reflectivity and its light extraction efficiency, but the improvement of light extraction efficiency is very limited, and it increases the process and cost of the chip.

Method used

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  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof

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Embodiment Construction

[0032] The present invention will be further described in conjunction with the accompanying drawings and specific embodiments.

[0033] refer to figure 1 As shown, the structure of the light-emitting diode is: the lower surface of the substrate 1 has a first electrode 7, and the epitaxial structure is formed on the upper surface of the substrate 1. The epitaxial structure is composed of multiple layers of Group III and V semiconductor compounds. , N-type confinement layer 3, active layer 4, P-type confinement layer 5, current spreading layer 6, the second electrode 8 is formed on the current spreading layer 6, and the reflective layer 2 is composed of more than 3 groups of Bragg reflection systems composition.

[0034] refer to figure 2 As shown, the reflection layer in one embodiment is composed of three groups of Bragg reflection systems, that is, the first group of Bragg reflection systems 21 , the second group of Bragg reflection systems 22 and the third group of Bragg ...

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Abstract

The invention relates to the field of light emitting diodes. The structure of the light-emitting diode is: the lower surface of the substrate has a first electrode, and the epitaxial structure is formed on the upper surface of the substrate. Electrodes are formed on the current spreading layer. Wherein, the reflective layer is composed of more than 3 groups of Bragg reflective systems, and each group of Bragg reflective systems is composed of more than 3 pairs of low-refractive index material layers and high-refractive index material layers alternating Bragg reflective layers, and each group of Bragg reflective The refractive index of the high-refractive-index material layer in the Bragg reflective layer in the system gradually decreases stepwise from each group above the substrate. The method for manufacturing the above light-emitting diode structure includes the steps: A, constructing a substrate; B, forming a reflective layer on the upper surface of the substrate; C, epitaxially extending an N-type confinement layer, an active layer, and a P-type layer on the reflective layer. A confinement layer and a current spreading layer; D, forming a first electrode and a second electrode on the bottom surface of the substrate and the upper surface of the epitaxial layer; E, cutting.

Description

technical field [0001] The invention relates to the field of light emitting diodes (LED, Light Emitting Diode), which can be classified as H01L33 / 00 in IPC classification. Background technique [0002] Light-emitting diodes (LEDs) are rapidly developing as the main light source due to their low power consumption, small size, and high reliability. Especially in recent years, the field of utilization of light-emitting diodes is rapidly expanding, and the requirements for light-emitting diodes with higher brightness and better luminous efficiency are increasing. [0003] At present, improving the luminous efficiency of red and yellow light-emitting diodes mainly lies in the external quantum efficiency, and it is most economical to improve the external quantum efficiency only by changing the epitaxial layer. The Bragg reflection layer is an effective way to improve the external quantum efficiency. [0004] Chinese invention patent CN 101859860A discloses an aluminum gallium in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/10
Inventor 林志伟蔡建九陈凯轩
Owner XIAMEN CHANGELIGHT CO LTD
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