Ito sputtering target and method for manufacturing the same
A sputtering target and content technology, which is applied in the field of ITO sputtering targets, can solve the problems of difficulty in preventing cracks, cannot fully prevent cracks, etc., and achieve the effect of effective manufacturing
Active Publication Date: 2013-05-29
MITSUI MINING & SMELTING CO LTD
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- Application Information
AI Technical Summary
Problems solved by technology
[0006] However, in any one of these sintered bodies ITO sintered bodies, the content of Sn is expressed as SnO 2 If it is equal to or less than 5% by mass in terms of conversion, cracks cannot be sufficiently prevented. In particular, it is difficult to prevent cracks that occur when bonding to the back sheet.
Method used
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Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1～12、 comparative example 1～6
[0056] Using a ball mill, the specific surface area measured by the BET method was the value shown in Table 1, In 2 o 3 Powder and SnO 2 Powder mixed into SnO 2 The content of was set to the amount shown in Table 1, and the mixed powder was prepared. Table 1 shows the specific surface areas of the obtained mixed powders measured by the BET method.
[0057] Add polyvinyl alcohol diluted to 4% by mass to the mixed powder in an amount of 6% by mass relative to the mixed powder, and use a mortar to blend the polyvinyl alcohol with the powder, and then pass through a 5.5 mesh mesh screen. The obtained powder is filled in a punching die, and the punching pressure is 1t / cm 2 Press molding was carried out for 60 seconds to obtain a molded body of 200 mm×500 mm×10 mm.
[0058]Put the obtained molded body in a capacity of about 1m 3 In the sintering furnace, let oxygen flow into the furnace at a rate of 1L / h, so that the firing environment is set as an oxygen flow environment, an...
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Abstract
The present invention relates to an ITO sputtering target and a method for manufacturing the same. The ITO sputtering target is characterized in that the content of Sn is less than or equal to 5% mass percentage when calculated in SnO2, and the residual stress is -650 to -200 Mpa. The residual stress is preferably -650 to -200 Mpa when the thermal expansion coefficient of a back plate adhered with the ITO sputtering target is below 2.386*10<-5> / DEG C, and is preferably -650 to -250 Mpa when the thermal expansion coefficient of the back plate adhered with the ITO sputtering target is larger than 2.386*10<-5> / DEG C. Even when the SnO2 content of the ITO sputtering target is less than or equal to 5% mass percentage, no crack is generated, in addition, the ITO sputtering target has no crack when adhered to a copper back plate.
Description
technical field [0001] The present invention relates to a kind of ITO sputtering target, more particularly, relate to a kind of even SnO 2 The ITO sputtering target whose content is less than or equal to 5% by mass and which is not prone to cracks during bonding. Background technique [0002] Since the ITO (Indium-Tin-Oxide) film has high permeability and conductivity, it can be widely used in transparent electrodes of flat panel displays and touch panels. Although the ITO film used for transparent electrodes usually contains SnO 2 In conversion, it is about 10% by mass of Sn, but as an ITO film used for touch panels, since relatively high resistance is required, the content of Sn is expressed as SnO 2 When converted, it is an ITO film with a mass percentage of about 3%. The ITO film is generally formed by sputtering an ITO sputtering target. The ITO sputtering target is generally used by bonding to a Cu back plate. Therefore, when forming an ITO film for a touch panel,...
Claims
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IPC IPC(8): C23C14/34C04B35/453C04B35/622
CPCC04B35/01C04B2235/3293C23C14/086C23C14/3414
Inventor 真崎贵则
Owner MITSUI MINING & SMELTING CO LTD