Method of flattening the substrate

A flattening and substrate technology, applied in the field of flattening process, can solve problems such as rough patterning and yield reduction, and achieve the effect of improving flatness

Active Publication Date: 2011-12-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These variable step heights and unwanted residu

Method used

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  • Method of flattening the substrate
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  • Method of flattening the substrate

Examples

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[0054] Many different embodiments or examples are provided below to implement the features of various embodiments of the present invention. The following will briefly describe the structure and arrangement of specific embodiments. Of course, the following description is only an example and is not intended to limit the present invention. In addition, in each example of the present invention, there may be repeated element numbers, but the above repetition is only used to briefly and clearly describe the present invention, and does not mean that the various embodiments and structures are related.

[0055] Chemical mechanical polishing (CMP) is a process used to remove the film from the surface of the substrate, and it is usually used to remove the undulating film on the surface of the substrate. Since the chemical mechanical polishing pad presses the entire substrate surface, this process can remove the surface undulations across the entire substrate. Chemical mechanical polishing ...

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Abstract

The embodiments of the invention described enable improved planarity of substrates, which is crucial for patterning and device yield improvement. Chemical-mechanical polishing (CMP) is used to remove film to planarize the substrate before the final thickness is reached or before all removal film is polished. The substrate is then measured for its topography and film thickness. The topography and thickness data are used by the gas cluster ion beam (GCIB) etch tool to determine how much film to remove on a particular location. GCIB etch enables removal of final layer to meet the requirements of substrate uniformity and thickness target. The mechanisms enable improved planarity to meet the requirement of advanced processing technologies.

Description

technical field [0001] The present invention relates to a planarization process, in particular to a method for planarizing a substrate by using a cluster ion beam (CIB for short) after chemical mechanical polishing. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Improvements in integrated circuit (IC) material technology have produced several generations of integrated circuits, each generation more complex than the previous generation. However, the above-mentioned developments all make the process and manufacture of ICs more complicated. Therefore, corresponding progress is required in IC processes to realize advanced integrated circuits. [0003] During the development of integrated circuits, functional density (ie, the number of interconnected elements per chip area) has increased while geometric size (ie, the components or lines that can be fabricated using semiconductor processes) has decreased. This shrinking ...

Claims

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Application Information

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IPC IPC(8): H01L21/302B24B7/22
CPCH01L22/12H01L21/76819H01L21/76229H01L22/20H01L21/32115H01L21/31116H01L21/32136H01L21/31055H01L21/3065
Inventor 王祥保
Owner TAIWAN SEMICON MFG CO LTD
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