Complex Acoustic Resonator

An acoustic resonator, high-sound technology, used in electrical components, impedance networks, etc.

Inactive Publication Date: 2011-12-21
庞慰 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Tuning a wafer with such a high trim sensitivit...

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Embodiment Construction

[0081] The composite acoustic wave resonator of the present invention will be described in detail below with reference to the embodiments and the accompanying drawings.

[0082] Refer to the attached Figure 1-10 The present invention will be described by way of examples. According to the purpose of the present invention, one aspect of the present invention relates to a bulk acoustic wave resonator using a composite layer structure, wherein the composite layer structure is composed of a series of high acoustic impedance materials and low acoustic impedance materials alternately, so that the acoustic wave resonator can be improved. Resistance to environmental changes and self-aging, reducing correction sensitivity, and / or optimizing dispersion characteristics of acoustic resonators.

[0083] Although the following description of the present invention is based on a typical embodiment of FBAR, the present invention can be applied to both FBAR and SMR. According to the present i...

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Abstract

An acoustic wave resonator comprising: a substrate with an air cavity; a first pair of low and high acoustic impedance layers formed on the substrate and located above the air cavity; a seed formed on the first pair of low and high acoustic impedance layers layer; a first electrode formed on the seed layer; a piezoelectric layer formed on the first electrode; a second electrode formed on the piezoelectric layer; a pair of second low and high acoustic impedance layers formed on the second electrode ; a passivation layer formed on the second pair of low and high acoustic impedance layers. The first low and high acoustic impedance layer pair includes a first high acoustic impedance layer positioned above the air cavity, and a first low acoustic impedance layer positioned between the first high acoustic impedance layer and the seed layer; second low and high acoustic impedance layers The impedance layer pair includes a second low acoustic impedance layer formed on the second electrode, and a second high acoustic impedance layer formed between the second low acoustic impedance layer and the passivation layer. The invention can improve the resistance of the acoustic wave resonator to environmental changes and self-aging, reduce the frequency correction sensitivity, and/or optimize the dispersion characteristics of the acoustic wave resonator.

Description

technical field [0001] The invention relates to an acoustic wave resonator and filter. In particular, it relates to a composite acoustic wave resonator using a composite layer structure. Background technique [0002] Piezoelectric bulk acoustic wave (BAW) resonators are widely used in high performance radio frequency (RF) filters and duplexers in wireless handheld devices. Compared with traditional RF ceramic filters and surface acoustic wave (SAW) filters, BAW filters have unique advantages: small size, small frequency drift with temperature, large power capacity, high operating frequency, etc. In combination with integrated circuits (ICs), BAW resonators have been used to form low phase noise oscillators and voltage controlled oscillators in frequency control applications. BAW resonators are usually processed on silicon wafers using IC processing technology. This processing method has the characteristics of small package size, good uniformity, and low cost. [0003] lik...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H9/15
Inventor 庞慰张浩
Owner 庞慰
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