LDMOS (laterally diffused metal oxide semiconductor) transistor structure and formation method thereof
A transistor and isolation structure technology, applied in the field of LDMOS transistor structure and its formation, can solve the problem of insufficient working voltage, achieve the effect of increasing the working voltage and improving device performance
Inactive Publication Date: 2012-01-04
ADVANCED SEMICON MFG CO LTD
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However, the operating voltage of the state-of-the-art LDMOS transistors is not high enough to meet the needs of various applications
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[0048] The gate dielectric layer of an LDMOS transistor in the prior art is generally formed by thermal oxidation, and its thickness is often small. It is difficult to form a particularly thick gate dielectric layer by thermal oxidation, resulting in devices that cannot withstand high operating voltages.
[0049] In the LDMOS transistor structure and the forming method thereof in the embodiment of the present invention, the field oxide layer is used as the gate dielectric layer, and since the field oxide layer has a relatively large thickness, it is beneficial to improve the working voltage of the device.
[0050] Further, in the LDMOS transistor structure and its forming method of this embodiment, a first isolation structure of the first doping type and a second isolation structure of the second doping type are formed, and the first isolation structure and the second isolation structure Through the epitaxial layer and extending into the semiconductor substrate, the area where ...
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The invention provides an LDMOS (laterally diffused metal oxide semiconductor) transistor structure and a formation method thereof, wherein the LDMOS transistor structure comprises a semiconductor substrate, a buried layer of a first doping type, an epitaxial layer of the first doping type, a grid dielectric layer, a grid electrode, a body region of the first doping type, a drain end drifting region of a second doping type, a drain region of the second doping type and a source region of the second doping type, wherein the buried layer of the first doping type is positioned in the semiconductor substrate; the epitaxial layer of the first doping type covers the surface of the semiconductor substrate; the grid dielectric layer is positioned on the epitaxial layer above the buried layer; the grid electrode is positioned on the grid dielectric layer; the body region of the first doping type is positioned in the epitaxial layer at one side of the grid dielectric layer and extends below the grid dielectric layer; the drain end drifting region of the second doping type is positioned in the epitaxial layer at the other side of the grid dielectric layer and extends below the grid dielectric layer; the drain region of the second doping type is positioned in the drain end drifting region; the source region of the second doping type is positioned in the body region, wherein the second doping type is contrary to the first doping type, and the grid dielectric layer is a field oxide layer. Through the structure and the method provided by the invention, the working voltage of the device can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices and semiconductor processes, in particular to an LDMOS transistor structure and a forming method thereof. Background technique [0002] High-voltage (especially high voltage greater than 120 volts) BCD technology and the circuit modules formed by it are widely used in automotive electronics, liquid crystal display panel (LCD) drive, organic light-emitting diode (OLED) drive, motor drive and other fields. popular research areas. [0003] Laterally diffused metal oxide (LDMOS) transistor is a power device commonly used in BCD technology, and it is a very critical device in high-voltage drive circuits. However, the operating voltage of the prior art LDMOS transistors is not high enough to meet the needs of various applications. Contents of the invention [0004] The technical problem to be solved by the present invention is to provide an LDMOS transistor structure and its forming me...
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IPC IPC(8): H01L29/78H01L21/761H01L21/336
Inventor 刘建华
Owner ADVANCED SEMICON MFG CO LTD