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Copper-clad plate with low-dielectric constant

A technology of copper clad laminate and low dielectric is applied in the field of copper clad laminate modified by hollow glass microspheres, which can solve the problems of limiting the application of integrated circuits, improving thermal stability, reducing the polarity of the material itself, and achieving good chemical resistance. High performance, cost-effective, good flatness

Active Publication Date: 2013-08-14
ZHEJIANG WAZAM NEW MATERIAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] There are three main ways to reduce the dielectric constant: one is to use the low-k characteristics of organic or inorganic substances, but the disadvantage is that general organic substances are not resistant to high temperatures and have insufficient adhesion to metals, thus limiting their application in integrated circuits. The second is the method of doping impurities to reduce the polarity of the material itself. It is generally used to dope fluorine in silicon dioxide to form FSG (fluorine-doped silicon oxide) to reduce the dielectric constant of the material.
But the fatal disadvantage is that the mechanical strength is poor, and the thermal stability needs to be improved.

Method used

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  • Copper-clad plate with low-dielectric constant

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034]refer to figure 1 , a low-dielectric copper-clad laminate prepared by the following method:

[0035] 1.1) Add 5kg of hollow glass microspheres with a particle size of 900 mesh, 10kg of dimethylformamide, 0.5kg of silane coupling agent, and 0.05kg of fluorocarbon surfactant into a high-speed disperser and stir at high speed;

[0036] 1.2) Mix 125kg of bisphenol A epoxy resin, 3.1kg of electronic grade dicyandiamide, 0.1kg of dimethylimidazole, and 28kg of dimethylformamide to form a glue solution with a gel time of 210-215 seconds;

[0037] 1.3) Add the glue solution in step 1.2) to the hollow glass microsphere solution stirred at high speed in step 1.1) and mix at high speed to form a mixed solution;

[0038] 2) Immerse the 2116 cloth in the mixed solution pumped into the rubber basin, put it into an oven at a temperature of 150°C to 230°C, bake it, and then cool it to obtain a resin fluidity of 22% to 23%, and a content of 48.4 %~49.4% 2116 cloth prepreg, cut the 2116...

Embodiment 2

[0044] refer to figure 1 , a low-dielectric copper-clad laminate prepared by the following method:

[0045] 1.1) Add 10kg of hollow glass microspheres with a particle size of 300 mesh, 22kg of dimethylformamide, 0.6kg of silane coupling agent, and 0.05kg of fluorocarbon surfactant into a high-speed disperser and stir at high speed;

[0046] 1.2) Mix 125kg of bisphenol A epoxy resin, 2.8kg of electronic grade dicyandiamide, 0.055kg of dimethylimidazole, and 28kg of dimethylformamide into a glue solution with a gel time of 245-250 seconds;

[0047] 1.3) Add the glue solution in step 1.2) to the hollow glass microsphere solution stirred at high speed in step 1.1) and mix at high speed to form a mixed solution;

[0048] 2) Immerse the 1506 cloth in the mixed liquid pumped into the rubber basin, put it into an oven at a temperature of 150°C to 230°C, bake it, and then cool it to obtain a resin fluidity of 18% to 19%, and a content of 42.3 %~42.7% 1506 cloth prepreg, cut the 1506 ...

Embodiment 3

[0054] refer to figure 1 , a low-dielectric copper-clad laminate prepared by the following method:

[0055] 1.1) Add 15kg of hollow glass microspheres with a particle size of 1200 mesh, 20kg of dimethylformamide, 1kg of silane coupling agent, and 0.07kg of fluorocarbon surfactant into a high-speed disperser and stir at high speed;

[0056] 1.2) Mix 125kg of bisphenol A epoxy resin, 2.5kg of electronic grade dicyandiamide, 0.050kg of dimethylimidazole, and 26kg of dimethylformamide to form a glue with a gel time of 260-270 seconds;

[0057] 1.3) Add the glue solution in step 1.2) to the hollow glass microsphere solution stirred at high speed in step 1.1) and mix at high speed to form a mixed solution;

[0058] 2) Immerse the 2116 cloth in the mixed solution pumped into the rubber basin, put it into an oven at a temperature of 150°C to 230°C, bake it, and then cool it to obtain a resin fluidity of 20% to 21%, and a content of 46.5 %~47.3% 2116 cloth prepreg, cut the 2116 cloth...

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Abstract

The invention relates to a copper-clad plate with a low-dielectric constant. A preparation method of the copper-clad plate with a low-dielectric constant comprises the following steps of 1, mixing hollow glass microballoons, one or more solvents, a coupling agent, a surfactant, an epoxy resin, a curing agent and an accelerating agent by stirring to obtain a mixed solution, 2, dipping an electronic grade glass fiber fabric, roasting, and cooling to obtain prepregs, 3, carrying overlap of more than one of the prepregs, and coating two copper foil layers respectively on two surfaces of the overlapped prepregs to obtain a sheet material, 4, overlapping stainless steel plates on the two surface of the sheet material, feeding the sheet material with the stainless steel plates into an overlap-type compressor to carry out compacting, and carrying out thermal insulation, 5, disconnecting the compacted sheet material from the stainless steel plates, and 6, carrying out an edge cutting process on the sheet material separated from the stainless steel plates to obtain the copper-clad plate with a low-dielectric constant. The copper-clad plate with a low-dielectric constant has the advantages of low-dielectric constant, high strength, good smoothness, small thermal expansion coefficient, stable performances, high cost performance, stable thermal properties, high mechanical strength, low cost, and simple production process.

Description

technical field [0001] The invention relates to a low dielectric material, in particular to a copper clad laminate modified by hollow glass microspheres. Background technique [0002] The rapid development of semiconductor integrated circuit technology has promoted the continuous progress of new materials and new technologies, and has also made the semiconductor industry grow into a force that cannot be ignored in the industry. With the continuous reduction of line width and the continuous improvement of transistor density, more and more people have turned their attention to the application of low dielectric constant materials in VLSI. When companies such as Intel, IBM, AMD, Motorola, Infineon, TSMC, and UMC successively announced that they will use low dielectric constant materials in the technology of 0.13mm and below, the research on low dielectric constant materials and their process integration is very important. It has gradually become another important branch of sem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B37/06B32B27/04B32B27/20B32B37/10B32B17/04B32B27/38
Inventor 董辉郭江程沈宗华张俊勇温建文廖文悦陈华刚
Owner ZHEJIANG WAZAM NEW MATERIAL CO LTD
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