Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Atmospheric plasma device and manufacturing method thereof

A kind of atmospheric pressure plasma and plasma technology, applied in the direction of plasma, electrical components, etc., can solve the problems of reducing the life of the device, not easy to remove, corrosion of the cathode insulation medium, etc., to achieve the effect of increasing life, improving cleaning uniformity, and reducing corrosion

Active Publication Date: 2012-01-25
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (1) The circular design method is adopted, which does not take into account the equal design of the plasma generation area and the plasma exclusion area, which will easily cause the plasma to easily stay between the anode and the cathode, corrode the cathode and the insulating medium, and reduce the life of the device;
[0008] (2) Adopting the Chidori arrangement, the position of the plasma exclusion area and the position of the plasma generation area are not equidistant, and the plasma close to the plasma exclusion area is easy to be excluded, but the plasma far away from the plasma exclusion area is not easy to be excluded, so that the plasma in the local area is easy stagnation, while the plasma concentration near the plasma exclusion area on the outside of the cathode is higher, and the plasma concentration farther away from the plasma exclusion area is lower, resulting in uneven distribution of plasma and poor surface treatment uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Atmospheric plasma device and manufacturing method thereof
  • Atmospheric plasma device and manufacturing method thereof
  • Atmospheric plasma device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0030] refer to figure 2 , and see in conjunction with image 3 , is a structural schematic diagram of the first embodiment of the atmospheric pressure plasma device of the present invention, the atmospheric pressure plasma device includes: an anode 10, an insulating medium 12 and a cathode 14, the cathode 14 refers to the part facing the anode 10 with the insulating medium 12 separated, and the positive The partial area of ​​the pair is equal to the area of ​​the anode 10 .

[0031] The insulating medium 12 is disposed between the anode 10 and the cathode 14 .

[0032] An ionizable gas is filled between the anode 10 and the cathode 14 .

[0033]The cathode 14 includes a plurality of uniformly distributed identical plasma generation and removal units 141 . The above-mentioned plasma generation and exclusion unit 141 naming is determined for conve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an atmospheric plasma device and a manufacturing method thereof. The atmosphere plasma device comprises an anode, a cathode and an insulating medium arranged between the anode and the cathode, wherein ionizable gas is filled between the anode and the cathode; the cathode comprises a plurality of plasma generation and elimination units, each plasma generation and elimination unit comprises uniformly distributed and same plasma elimination areas and plasma generation areas; and the plasma elimination areas and the plasma generation areas are uniformly arranged, and the spacing of centers of every two plasma elimination areas among three mutually adjacent plasma elimination areas is equal. According to the mode, corrosion of plasma to the cathode and the insulating medium can be reduced, the service life of the atmosphere plasma device is prolonged, and the surface cleaning uniformity of the substrate can be improved.

Description

technical field [0001] The invention relates to the field of plasma display panel manufacturing, in particular to an atmospheric pressure plasma device and a manufacturing method thereof. Background technique [0002] As matter is continuously given energy, it heats up and changes from solid to liquid and then to gas. Continued application of energy results in a further change of state in which neutral atoms or molecules of the gas undergo high-energy collisions to produce negatively charged electrons, positive or negative ions, and other species. This mixture of charged species exhibits a collective behavior known as a "plasma". [0003] Atmospheric pressure plasma treatment as a new surface treatment technology, such as plasma cleaning, has low temperature and normal pressure treatment, will not cause damage to the material surface, no arc, no vacuum chamber, no harmful gas suction system, long-term use and It has many advantages such as no physical damage to the operato...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/24
CPCH05H2001/2412H05H1/2406H05H2245/123H05H2245/40
Inventor 严茂程施翔尹
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products