Ternary system high-temperature piezoelectric ceramic of magnesium bismuth titanate, bismuth zinc-based perovskite and lead titanate and preparation method thereof
A bismuth titanate, high-temperature piezoelectric technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., to achieve high Curie temperature, improve electrical insulation properties, and excellent piezoelectric performance
Inactive Publication Date: 2014-03-12
HEFEI UNIV OF TECH
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Unfortunately, there is no research report on the electrical properties and preparation process of piezoelectric ceramics formed from bismuth magnesium magnesium oxide-bismuth zinc-based perovskite-lead titanate in the existing literature.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0046] u=0.666, v=0.044, n=0, the formula is 0.666Bi(Mg 0.5 Ti 0.5 )O 3 +0.044Bi(Zn 0.5 Ti 0.5 )O 3 +0.29PbTiO 3
Embodiment 2
[0048] u=0.625, v=0.11, n=0, the formula is 0.625Bi(Mg 0.5 Ti 0.5 )O 3 +0.11Bi(Zn 0.5 Ti 0.5 )O 3 +0.265PbTiO 3
Embodiment 3
[0050] u=0.575, v=0.15, n=0, the formula is 0.575Bi(Mg 0.5 Ti 0.5 )O 3 +0.15Bi(Zn 0.5 Ti 0.5 )O 3 +0.275PbTiO 3
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Property | Measurement | Unit |
---|---|---|
Curie point | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a ternary system high-temperature piezoelectric ceramic of magnesium bismuth titanate, bismuth zinc-based perovskite and lead titanate and a preparation method thereof. The composition of the piezoelectric ceramic is expressed by a general formula (1-n) [uBi(Mg0.5Ti0.5)O3 + vBi(ZnxDy)O3 + (1-u-v) PbTiO3] + nM; and the preparation method comprises the steps of mixing, ball milling, pre-sintering, blank making, sintering, silver coating and polarization. The composition of the piezoelectric ceramic has perovskite structure and has similar phase interface of a rhombic ferroelectric phase and a foursquare ferroelectric phase, so the piezoelectric ceramic has excellent piezoelectric performance and high Curie temperature, is more suitable for high-temperature field, and has low dielectric loss; the electric polarization process is easier and more convenient; and the piezoelectric ceramic can be prepared by adopting a preparation technology of the traditional piezoelectric ceramic, particularly adopting cheap industrial raw materials, and has practicability.
Description
1. Technical field [0001] The invention relates to a piezoelectric ceramic and a preparation method thereof, specifically a bismuth magnesium titanate-bismuth zinc-based perovskite-lead titanate ternary high-temperature piezoelectric ceramic and a preparation method thereof, which belong to the manufacturing technology of electronic components field. 2. Background technology [0002] High-temperature piezoelectric ceramic materials have been widely used in many scientific research and industrial sectors such as aerospace, automobile, petrochemical, metallurgy, and site exploration. With the rapid development of science and technology, many electronic devices put forward higher requirements for the practical range and application environment of piezoelectric ceramic devices. At present, there are very few high-temperature piezoelectric ceramic materials with excellent performance and a service temperature higher than 400 °C. For a long time, piezoelectric single crystal mat...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/475C04B35/622H01L41/187H10N30/853
Inventor 左如忠赵万里左文武齐世顺刘隆冬吕洋
Owner HEFEI UNIV OF TECH
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com