Annealing device with built-in photoresist detection unit, photoresist detection method
A technology of detection unit and annealing device, which is applied in the direction of electrical components, phase influence characteristic measurement, semiconductor/solid-state device manufacturing, etc., can solve problems such as annealing device pollution, achieve stable quality, simple and effective judgment method, and save process and process time Effect
Active Publication Date: 2016-03-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0008] The prior art annealing apparatus is highly susceptible to contamination
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[0048] As mentioned in the background, prior art annealing apparatuses are prone to contamination. After research, the inventors of the present invention found that in the formation process of semiconductor devices in the prior art, it is possible to mistakenly send the wafer whose photoresist layer has not been removed to the annealing device for annealing, or place the wafer although the photoresist layer has been removed , but the wafer with photoresist remaining on the partial surface of the wafer is sent to the annealing device for annealing. Such a wafer with a photoresist layer on the surface or a part of the photoresist remaining on the surface enters the annealing device for annealing and pollutes the annealing device.
[0049] After further research, the inventors of the present invention found that the main component in the photoresist is C-O, and during the annealing process of the photoresist, the C-O in the photoresist will be carbonized to form particles, whethe...
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The embodiment of the invention provides an annealing device with a built-in photoresist detection unit. The annealing device comprises a fork piece, a boat, an annealing unit and the photoresist detection unit, wherein the fork piece is used for transporting a wafer into the boat; the boat is moved so that the wafer enters into the annealing unit; and before annealing is carried out, the fork piece is used for placing the wafer into the photoresist detection unit, and then the photoresist detection unit carries out photoresist residual detection. Correspondingly, the embodiment of the invention also provides a photoresist detection method utilizing the annealing device. In the method, before annealing treatment is carried out, the photoresist detection unit is firstly utilized to judge whether photoresist residuals exist on the surface of the wafer, so that the wafer with the photoresist residuals on the surface is prevented from entering the annealing unit and polluting the annealing unit, and the quality of semiconductor devices formed subsequently is ensured to be stable.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an annealing device with a built-in photoresist detection unit and a photoresist detection method. Background technique [0002] In the formation process of semiconductor devices, the mask pattern on the mask plate is usually transferred to the photoresist layer on the surface of the wafer by using a photolithography process, and then the mask pattern is transferred to the wafer by an etching process. Alternatively, the wafer is implanted with ions using the photoresist layer as a mask, and finally the photoresist layer is removed. Generally, in order to improve the performance of the subsequently formed semiconductor device, it is necessary to perform annealing after the ion implantation process or after depositing a certain functional layer. [0003] Please refer to figure 1 , the formation process of the semiconductor device of the prior art comprises: [0004] Step ...
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IPC IPC(8): H01L21/324G01N21/45
Inventor 王硕许忠义
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP