Method for improving full light sampling linearity based on semiconductor light amplifier polarization rotation effect

Abstract

The invention provides a method for improving the full light sampling linearity based on the semiconductor light amplifier polarization rotation effect, which is characterized in that maintaining light at proper power is filled for inhibiting the nonlinearity effect of the light gain of a semiconductor light amplifier, the output sampling pulse enveloped harmonic distortion is reduced, and the linearity of a full light sampling system is improved. The method has the characteristics that the structure of the semiconductor light amplifier does not need to be changed, the operation is simple andconvenient, and the effect is obvious. The method has the powerful promoting effect on improving the conversion precision of a next generation of an optical analog-to-digital converter, and wide application prospects are realized.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, the field of integrated optics and the field of photoelectric signal processing, and particularly relates to a method for improving the linearity of polarization rotation all-optical sampling based on a semiconductor optical amplifier. Background technique [0002] The all-optical sampling technology based on the polarization rotation of the semiconductor optical amplifier (SOA) is a signal conversion technology of optical control (see the literature Zhang Shangjian, Zhang Qian, Li Heping, etc. All-optical sampling based on the nonlinear polarization rotation effect of the semiconductor optical amplifier[J]. Semiconductor Acta Sinica, 2008, 29(6): 1031-1035), using the modulation effect of analog signal light on the carrier concentration and gain in the semiconductor optical amplifier, the polarization state of the sampling pulse light is rotated, and the pulse The polarization state modu...

AI Technical Summary

Problems solved by technology

The characteristic that the optical gain of the semiconductor optical amplifier presents a nonlinear change to the input optical power is an important factor that produces nonlinear distortion. Gain-clamped structures can be introduced into the semiconductor optical amplifier to control the carrier concentration modulation effect. Reduce the nonlinearity of the optical gain of the semiconductor optical amplifier (see the literature CHEN G X, LI W, XU C L et al.Time and spectral domain properties of distributed feedback type gain-clamped semiconductor optical amplifiers[J].IEEE Photon.Tech.Lett ., 2006, 18(8): 932-934), the gain clamping structure includes several types such as distributed feedback structure, distributed Bragg reflector structure, fiber Bragg grating structure and ring cavity structure, and the production process for realizing these structures is complex , the cost is high, and it is not suitable for the application of general semiconductor optical amplifiers

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